Excitonic absorption edge of indium selenide

Camassel, Jean; Merle, P.; Mathieu, H.; Chévy, A.

doi:10.1103/physrevb.17.4718

Cited by 244 publications

(133 citation statements)

References 25 publications

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“…It was shown for the first time that the main recombination mechanism at high level injection region is the Auger recombination, as in bulk crystals. This result is consistent with a three-dimensional model applied for explanation of an excitonic absorption edge in TlGaSe 2 [7] and other layered semiconductors [12]. …”

Section: Discussionsupporting

confidence: 79%

Investigation of structure and carrier recombination in TlGaSe₂layered crystals

Grivickas¹

2006

Lithuanian J. Phys.

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Large size TlGaSe2 layered crystals grown by Bridgman method have been investigated by x-ray microanalysis and scanning electron microscopy. The mechanism of excess free carrier recombination after a high level laser pulse excitation performed in a high quality sample has been investigated. It has been shown that, in high injection region, the carrier lifetime is mainly determined by Auger recombination. The Auger recombination coefficient is established to be about 1·10 −29 cm 6 /s. In low injection region, minority carrier trapping is observed. The longest exponential majority carrier constant lifetime is equal to 6 ms at 70 K.

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Section: Discussionsupporting

confidence: 79%

Investigation of structure and carrier recombination in TlGaSe₂layered crystals

Grivickas¹

2006

Lithuanian J. Phys.

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“…A calculation with the LDA returns the band gap for bulk InSe as 0.41 eV as compared to the bulk experimental value of 1.40 eV at low temperature 32,50 (1.25 eV at room temperature 17 ). Hence, we subtract δE 0K g ≈ 0.99 eV from the energies of all valence band states while keeping the conduction band energies unchanged for bulk, few-layer, and monolayer InSe.…”

Section: Crystal Structure and Symmetrymentioning

confidence: 99%

“…While in its bulk form InSe [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] is a direct gap semiconductor 37 , its electronic structure undergoes significant changes upon exfoliation to few-layer or monolayer thickness, with particularly interesting optical properties observed in recent experiments 1,38 . Density functional theory (DFT) calculations for single layer crystals of InSe 39,40 predict a large increase in the band gap as compared to bulk crystals, with the valence band maximum slightly shifted from the Γ point.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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We present a tight-binding (TB) model and k · p theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all s and p valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono-and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the Γ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, N . We find a strong dependence on N of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations 1 . Also, we find that the conduction band electrons are relatively light (m ∝ 0.14 − 0.18me), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the Γ-point, which is found for up to N ∝ 6.

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“…Including the results of MO, it can be concluded that all MX monolayers are indirect band gap semiconductors. Note that the bulk counterparts of GaS, GaSe, and InSe are also indirect gap semiconductors with 2.59, 2.07, and 1.35 eV band gaps, respectively [63,64]. The lower and upper limits of the band gap are determined by oxides (vide supra).…”

Section: Electronic Structurementioning

confidence: 99%

Structural and electronic properties of monolayer group III monochalcogenides

et al. 2017

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We investigate the structural, mechanical, and electronic properties of the two-dimensional hexagonal structure of group III-VI binary monolayers, MX (M = B, Al, Ga, In and X = O, S, Se, Te) using first-principles calculations based on the density functional theory. The structural optimization calculations and phonon spectrum analysis indicate that all of the 16 possible binary compounds are thermally stable. In-plane stiffness values cover a range depending on the element types and can be as high as that of graphene, while the calculated bending rigidity is found to be an order of magnitude higher than that of graphene. The obtained electronic band structures show that MX monolayers are indirect band-gap semiconductors. The calculated band gaps span a wide optical spectrum from deep ultraviolet to near infrared. The electronic structure of oxides (MO) is different from the rest because of the high electronegativity of oxygen atoms. The dispersions of the electronic band edges and the nature of bonding between atoms can also be correlated with electronegativities of constituent elements. The unique characteristics of group III-VI binary monolayers can be suitable for high-performance device applications in nanoelectronics and optics.

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Excitonic absorption edge of indium selenide

Cited by 244 publications

References 25 publications

Investigation of structure and carrier recombination in TlGaSe₂layered crystals

Investigation of structure and carrier recombination in TlGaSe₂layered crystals

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

Structural and electronic properties of monolayer group III monochalcogenides

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Excitonic absorption edge of indium selenide

Cited by 244 publications

References 25 publications

Investigation of structure and carrier recombination in TlGaSe2layered crystals

Investigation of structure and carrier recombination in TlGaSe2layered crystals

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

Structural and electronic properties of monolayer group III monochalcogenides

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Investigation of structure and carrier recombination in TlGaSe₂layered crystals

Investigation of structure and carrier recombination in TlGaSe₂layered crystals