2015
DOI: 10.1088/0031-8949/90/8/085806
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Excitonic gap formation in neutral bilayer structures

Abstract: We consider the pairing between conduction band electrons, and the valence band holes in the neutral bilayer-type structures. By employing the bilayer Hubbard model, we show the possibility of the inter-plane exciton formation in the system without applied external field. The in-plane and inter-plane Coulomb interaction effects on the pairing mechanism are considered, and the role of the in-plane particle hopping asymmetry on the gap behavior is analyzed in the paper. We show that both Frenkel-type pairing cha… Show more

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Cited by 4 publications
(25 citation statements)
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“…Here, the DOS structure is also degenerated at the very low-temperature T /|t 1 | = 0.0001, due to the degenerate gap structure at U/|t 1 | = 1.5 (see the discussion in Ref. 33). There are 18 solutions for the gap parameter corresponding to the value U/|t 1 | = 1.5 [33].…”
Section: Normal Dos Functionsmentioning
confidence: 82%
See 4 more Smart Citations
“…Here, the DOS structure is also degenerated at the very low-temperature T /|t 1 | = 0.0001, due to the degenerate gap structure at U/|t 1 | = 1.5 (see the discussion in Ref. 33). There are 18 solutions for the gap parameter corresponding to the value U/|t 1 | = 1.5 [33].…”
Section: Normal Dos Functionsmentioning
confidence: 82%
“…The situation is more drastic at the stable bunching point U B /|t 1 |, which remains unchanged when increasing the temperature (see the discussion in the Section 5 5.1 and also in Ref. 33). In Figs.…”
Section: Normal Dos Functionsmentioning
confidence: 89%
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