Excitonic properties of the polar faces of bulk ZnO after wet etching

“…In general, Zn-polar ZnO is more [24]. The surface of Opolar ZnO is O-terminated, while Zn-polar ZnO surface is Zn-terminated [24,25]. A charge transfer from Zn atoms to underlying O atoms occurs on a Zn-polar sirface due to the large electronegativity difference between Zn and O atoms [24,26].…”

Section: Characterization Of Polarity Of Zno Filmsmentioning

confidence: 99%

Control of crystal polarity in oxide and nitride semiconductors by interface engineering

et al. 2006

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“…17,18 Hence, less corrosive organic elements should be used to remove the fluid layer and the strong carbon contamination observed with XPS. 17,18 Hence, less corrosive organic elements should be used to remove the fluid layer and the strong carbon contamination observed with XPS.…”

Section: Ex Situ Chemical Cleaningmentioning

confidence: 99%

Thermal diffusion of Co into atomically flat ZnO(000-1) surfaces investigated by scanning probe microscopies and low energy electron diffraction

Dumont¹,

Seldrum²,

Couet³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor depositionIn situ cleaning and characterization of oxygen-and zinc-terminated, n-type, ZnO{0001} surfaces J. Appl. Phys. 95, 5856 (2004); 10.1063/1.1695596Effect of surface treatment on the γ-WO 3 (001) surface: A comprehensive study of oxidation and reduction by scanning tunneling microscopy and low-energy electron diffractionIn this study, we established a cleaning procedure to obtain atomically flat ͑000-1͒ surfaces from pressurized melt grown ZnO. Ex situ chemical cleaning removes fluid layer and trapped contaminants from the surface. This was followed by cycles of sputtering and annealing in ultrahigh vacuum. It is critical that the ion energy be high enough to produce small and highly mobile molecular fragments. On the other hand, annealing must be done at moderate temperatures to avoid segregation of potassium to the surface. Secondly, the interaction of Co thin films on atomically flat ZnO͑000-1͒ has been investigated by low energy electron diffraction, scanning tunneling microscopy, and Auger electron spectroscopy. A high density of islands nucleates at the earliest stages of the growth and a subsequent Volmer-Weber growth of these islands is observed. Upon annealing at 550°C, an atomically flat surface ͑Zn,Co͒O͑000-1͒ is restored due to the diffusion of the Co into the semiconductor.

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“…ZnO is deteriorated by most acids and water [2,3]. Hence, less corrosive organic elements should be used to remove the fluid layer and surface contaminants, as described in the experimental section.…”

Section: Ex-situ Chemical Cleaningmentioning

confidence: 99%

Towards clean and atomically flat ZnO (000&1macr;) surfaces

Seldrum

Couet

Brison

et al. 2006

Phys. Status Solidi (c)

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We established a cleaning procedure to obtain atomically flat (000 1) surfaces from pressurized melt grown ZnO using ex-situ and in-situ processing. The ex-situ chemical cleaning consisted in removing the surface fluid layer and contaminants from the surface. The physical in-situ procedure used sputteringannealing cycles to clean and reconstruct the surface. 3 key parameters were in-situ investigated: the annealing time, the annealing temperature and the sputtering energy. Investigations were carried out by

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Excitonic properties of the polar faces of bulk ZnO after wet etching

Cited by 17 publications

References 12 publications

Control of crystal polarity in oxide and nitride semiconductors by interface engineering

Control of crystal polarity in oxide and nitride semiconductors by interface engineering

Thermal diffusion of Co into atomically flat ZnO(000-1) surfaces investigated by scanning probe microscopies and low energy electron diffraction

Towards clean and atomically flat ZnO (000&1macr;) surfaces

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