Excitonic recombination and absorption in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>As/GaAs heterostructure nanowires

Luca, Marta De; Lavenuta, Giovanna; Polimeni, A.; Rubini, S.; Grillo, Vincenzo; Mura, Francesco; Miriametro, A.; Capizzi, M.; Martelli, F.

doi:10.1103/physrevb.87.235304

Cited by 35 publications

(23 citation statements)

References 40 publications

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“…For integrable models, the eigenvalues are known using Yang-Baxter equations, and one may evaluate Tr A (ρ n A ) explicitly. Generalizing previous results [53], we have evaluated the Rényi entropy (1) for the Forrester-Baxter (FB) Restricted Solid On Solid Model (RSOS) on the square lattice [50]. This model is a lattice realisation of all off-critical minimal models M p,p (ξ), including the non-unitary series.…”

Section: Model Analysismentioning

confidence: 93%

Entanglement entropy of non-unitary conformal field theory

Bianchini¹,

Castro-Alvaredo²,

Doyon³

et al. 2014

J. Phys. A: Math. Theor.

127

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In this letter we show that the Rényi entanglement entropy of a region of large size in a one-dimensional critical model whose ground state breaks conformal invariance (such as in those described by non-unitary conformal field theories), behaves as S n ∼ c eff (n+1) 6n log , where c eff = c − 24∆ > 0 is the effective central charge, c (which may be negative) is the central charge of the conformal field theory and ∆ = 0 is the lowest holomorphic conformal dimension in the theory. We also obtain results for models with boundaries, and with a large but finite correlation length, and we show that if the lowest conformal eigenspace is logarithmic (L 0 = ∆I +N with N nilpotent), then there is an additional term proportional to log(log ). These results generalize the well known expressions for unitary models. We provide a general proof, and report on numerical evidence for a non-unitary spin chain and an analytical computation using the corner transfer matrix method for a non-unitary lattice model. We use a new algebraic technique for studying the branching that arises within the replica approach, and find a new expression for the entanglement entropy in terms of correlation functions of twist fields for non-unitary models.

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Section: Model Analysismentioning

confidence: 93%

Entanglement entropy of non-unitary conformal field theory

Bianchini¹,

Castro-Alvaredo²,

Doyon³

et al. 2014

J. Phys. A: Math. Theor.

127

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“…In this case the intensity‐dependent behavior shown Figure b would be compatible with the observation of spatially indirect recombination in the type II aligned ZB‐WZ heterostructure . However, we point out that in the GaAs NWs grown in our laboratory and showing the contemporary presence WZ and ZB, a sharp peak has always been observed in the excitonic energy region . In our Te‐doped samples, instead, no excitonic recombination is longer observed, an indication that the PL changes should be attributed to the incorporation of tellurium.…”

Section: Photoluminescencementioning

confidence: 99%

A Roadmap for Controlled and Efficient n‐Type Doping of Self‐Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Orrù

Repiso

Carapezzi

et al. 2016

Adv Funct Materials

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N‐type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n‐type GaAs nanowires with carrier density as high as 1020 electron cm−3 by self‐assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single‐wire field‐effect devices. Low‐temperature photoluminescence is used to characterize the Te‐doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation.

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“…Indeed, so far temperaturedependent optical studies in WZ-phase NWs were restricted to the band gap transition A and did not explore B and C, but in GaAs. 7,39 In ref 39, the T dependence of C was reported but not compared with that of A and B transitions. In ref 7, we found that A and B exhibit a similar band gap thermal reduction.…”

mentioning

confidence: 96%

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires

et al. 2015

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Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

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Excitonic recombination and absorption in InxGa1−xAs/GaAs heterostructure nanowires

Cited by 35 publications

References 40 publications

Entanglement entropy of non-unitary conformal field theory

Entanglement entropy of non-unitary conformal field theory

A Roadmap for Controlled and Efficient n‐Type Doping of Self‐Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires

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