Excitons bound to nitrogen pairs in GaAs

Liu, X.; Pistol, Mats‐Erik; Samuelson, Lars

doi:10.1103/physrevb.42.7504

Cited by 74 publications

(40 citation statements)

References 24 publications

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“…Their resonant energies correspond to the barrier band gap, which is reduced at the MQW interfaces by the presence of N. The properties of the new peaks and their response to thermal annealing suggest the formation of N-N pairs in nearest neighbour anion position near or at the MQW interfaces. This interpretation is consistent with the known tendency of N to bond to Al atoms [4], and to form pairs [17].…”

Section: Introductionsupporting

confidence: 84%

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells

Lazić

Calleja

Hey

2006

Physica Status Solidi (b)

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We report resonant Raman scattering measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma-assisted molecular beam epitaxy. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm -1. They are resonant in the energy range 1.81 -1.87 eV at decreasing energies for increasing N concentration. The resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. The peaks are interpreted in terms of local vibrations involving GaN and AlN units and pairs. They seem to form mostly at the quantum well interfaces due to preferential N bonding to Al.

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Section: Introductionsupporting

confidence: 84%

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells

Lazić

Calleja

Hey

2006

Physica Status Solidi (b)

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“…The red shift of the band gap is mainly caused by the level repulsion with the N-related states, which are shifting only at about 3.5 to 5 meV/kbar [28]. Consequently, the to- …”

Section: Optical Properties Of Ga(nasp)/gap Mqwsmentioning

confidence: 97%

Optical properties of Ga(NAsP) lattice matched to Si

Karcher

Grüning

Klar

et al. 2009

Phys. Status Solidi (c)

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III/V semiconductors containing dilute amounts of N exhibit remarkable features such as a strong increase of the effective mass of the electrons, a huge red‐shift of the band gap compared to the host material and a weak pressure dependence of the PL band position. We examined these features by studying the affect of N incorporation onto the band formation of the alloys Ga(NAs) and Ga(NP). The dispersion‐free N‐related impurity band interacts in a repulsive way with the conduction band of the host material. The novel As‐rich Ga(NAsP) alloy exhibits both the electronic as well as the mechanical properties to serve as an active laser material for III/V integration onto Si substrates. We studied the optical properties by means of photoluminescence, excitation and modulation spectroscopy as well as pressure dependence. Energies of the interband transitions within the MQW have been successfully simulated by a type I QW calculation, yielding a CB to VB offset ration of about 1:2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Since sharp luminescence lines are observed from isoelectronic traps in dilute GaAsN alloys, they are prospective candidates for single photon emitters [3,4], which are expected to play an important role in the field of quantum information technology. However, isoelectronic traps in dilute GaAsN alloys have been diversely reported by several research groups [5][6][7], and are still controversial. For example, Liu et al [6] reported nitrogen-related levels are located above the GaAs conduction band edge and that the isolated N atom forms a resonant state in the host GaAs, which is the basis for band anti-crossing model [8].…”

mentioning

confidence: 99%

“…However, isoelectronic traps in dilute GaAsN alloys have been diversely reported by several research groups [5][6][7], and are still controversial. For example, Liu et al [6] reported nitrogen-related levels are located above the GaAs conduction band edge and that the isolated N atom forms a resonant state in the host GaAs, which is the basis for band anti-crossing model [8]. On the other hand, Schwabe et al [5] observed nitrogen-related luminescence slightly below the conduction band edge of GaAs.…”

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confidence: 99%

Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

Yaguchi

Aoki

Morioke

et al. 2007

Phys. Status Solidi (c)

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We have studied photoluminescence spectra in detail to clarify the character of the isoelectronic traps in dilute GaAsN alloys. Several sharp lines have been observed at the lower energy side of the GaAs bandgap and are in good agreement with the nitrogen pair-related emission lines previously reported. In addition to the nitrogen pair-related lines, some other emission lines have been also observed. Compared with the energies of these emission lines and the nitrogen pair-related emission lines, it was found that the energy differences agree with the longitudinal optical phonon energy at the Γ point of GaAs, showing that the character of isoelectronic traps due to nitrogen pairs in dilute GaAsN alloys is significantly contributed from the conduction band state at the Γ point. The temperature dependence of the peak energy of luminescence due to nitrogen pairs also indicates that the character of isoelectronic traps in dilute GaAsN alloys is due to the conduction band edge state at the Γ point of GaAs. For a dilute GaAsN alloy with lower nitrogen concentration, we have observed that the intensity of an emission line increased superlinearly with excitation power.

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Excitons bound to nitrogen pairs in GaAs

Cited by 74 publications

References 24 publications

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells

Optical properties of Ga(NAsP) lattice matched to Si

Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

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