Excitons in highly optically excited gallium phosphide

Pyshkin, S. L.; Zifudin, L.Zv.

doi:10.1016/0022-2313(74)90043-x

Cited by 17 publications

(33 citation statements)

References 9 publications

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“…In this case the impurity atom of nitrogen regularly is located into host lattice instead of phosphorus and affects the band structure of the crystals, which is now a dilute solid solution of GaP-GaN but not GaP doped by occasionally located N atoms. Note that the increase in the level of excitation of luminescence (dotted lines in Figure 10) in the case of partly ordered GaP:N leads to a broad luminescence band as a result of bound www.intechopen.com exciton interaction (Pyshkin & Zifudin, 1974), while in the case of perfectly ordered crystals one can see an abrupt narrowing of the luminescence band, probably due to stimulated emission in perfect non-defect crystals as is discussed further below. Thus, taking into account the above-mentioned results, a model for the crystal lattice and its behavior at a high level of optical excitation for 40-year-old ordered GaP doped by N ( Figure.…”

Section: Aged and Freshly Grown Crystals: Comparison Of Propertiesmentioning

confidence: 94%

“…Comparison of the properties of the same crystals has been performed in the 1960s, 1970s, 1980s, 1990s (Goryunova et al, 1969Ashkinadze et al, 1968;Pyshkin & Zifudin, 1974;Pyshkin, 1975a;Pyshkin et al, 1990a,b;, 1998, and during 2000s (Pyshkin, 2002a,b;Pyshkin & Ballato, 2005Pyshkin et al, 2006Pyshkin et al, , 2007aPyshkin et al, ,b,c, 2008Pyshkin et al, , 2009aPyshkin et al, ,b,c,d,e, 2010aPyshkin, 2009Pyshkin, -2012 along with those of newly made GaP nanocrystals (Pyshkin et al, , 2010b; and freshly prepared bulk single crystals (Pyshkin et al, 2009a,b,c,d,e). Jointly with the above-noted references this chapter provides a generalization of the results on long-term observation of luminescence, absorption, Raman light scattering, and microhardness of the bulk single crystals in comparison with the same properties of "modern" GaP nanocrystals.…”

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confidence: 99%

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Long‐Term Convergence of Bulk‐ and Nano‐Crystal Properties

Pyshkin

Ballato

2011

Ceramic Transactions Series

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Section: Aged and Freshly Grown Crystals: Comparison Of Propertiesmentioning

confidence: 94%

mentioning

confidence: 99%

Long‐Term Convergence of Bulk‐ and Nano‐Crystal Properties

Pyshkin

Ballato

2011

Ceramic Transactions Series

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“…1,2 Comparison of the properties of the same crystals have been performed in the 1960s, 1970s, 1980s, and 1990s [3][4][5][6][7][8][9][10][11] as well as with GaP nanocrystals 12 and also with freshly prepared bulk single crystals.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Luminescence from Doped Gallium Phosphide over 40 Years

Pyshkin

Ballato

Bass

et al. 2009

Journal of Elec Materi

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The results of luminescence studies conducted on the same samples of GaP over a 40-year period are discussed. The results strongly imply that periodic ordering of impurities improved the overall optical and mechanical properties of the material over time. Forty years after preparation, ''hot'' luminescence spectra in gallium phosphide (GaP) are similar to those for nanocrystals. The aged pure and N-doped crystals exhibit stimulated emission at 300 K. The aged GaP:N:Sm at room temperature generates bright green or yellow and red tunable luminescence. These results correlate with Raman light scattering and microhardness data obtained from the same crystals.

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“…Evaluation of the characteristic time of such reordering, based on the known Ising model, suggests that the time for the substitution reaction associated with N diffusion along P sites in GaP:N is about 15 years at room temperature [1]. Accordingly, observations of the luminescence from GaP:N crystals made at 10-15 year intervals under similar experimental conditions were used successfully to track such structural evolution [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In this paper, as well as in the works published in 2012-2013 [14][15][16] we report the cumulative effects of over 50 years of lattice ordering on properties of GaP single crystals, providing clear evidence for enhanced optoelectronic properties through temporal dynamics over long time periods.…”

Section: Preparation and Properties Of Gap With Ordered Position Of Nmentioning

confidence: 99%

“…These, along with other half-centennial findings, including modifications to luminescence kinetics, spontaneous Raman scattering, x-ray diffraction, absorption spectra, micro-hardness and density of dislocations, that are reported elsewhere [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] strongly suggest that close-to-ideal GaP:N crystals are formed over time through the equally-spaced disposition of N impurities from their chaotic distribution in the same freshly prepared crystals.…”

Section: Introductionmentioning

confidence: 99%

Excitonic Crystal and Nanotechnology

Pyshkin¹

2014

NSTOA

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The role and application of bound excitons in nanoscience and technology are discussed in this chapter. Bound excitons are well studied in semiconductors, especially in gallium phosphide doped by nitrogen (GaP:N). Doping of GaP with N leads to isoelectronic substitution of the host P atoms by N in its crystal lattice and to creation of the electron trap with a giant capture cross-section. Therefore, any non-equilibrium electron in the vicinity of the trap will be captured by N atom, attracting a nonequilibrium hole by Coulomb interaction and creating the bound exciton -short-lived nanoparticle with the dimension of the order of 10nm (it is the Bohr diameter of bound exciton in GaP:N). Note, that none of nanotechnology methods are used in creation or selection of dimensions of these nanoparticles -only natural forces of electron-hole interaction and electron capture by the traps are necessary for creation of these nanoparticles. As the result we get something like neutral short-lived atom analoguea particle consisting of heavy negatively charged nucleus (N atom with captured electron) and hole. So called "zero vibrations" do not destroy possible solid phase of bound excitons having these heavy nuclei that gives an opportunity to reach their crystal state -short-lived excitonic crystal.Thus using bound excitons as short-lived analogues of atoms and sticking to some specific rules, including the necessity to build in the GaP:N single crystal the excitonic super lattice with the identity period equal to the bound exciton Bohr dimension, we get a unique opportunity to create a new solid state media -consisting from short-lived nanoparticles excitonic crystal, obviously, with very useful and interesting properties for application in optoelectronics, nanoscience and technology. The following will discuss methods of preparation and possible application of GaP excitonic crystals and nanocrystals in optoelectronics. Preparation and Properties of GaP with Ordered Position of N ImpuritiesCrystals that are grown under conventional laboratory conditions naturally contain a varied assortment of defects such as displaced host and impurity atoms, vacancies, dislocations, and impurity clusters. These defects result from relatively rapid growth conditions and inevitably lead to the deterioration of optical and mechanical properties of the crystal. For instance, defects in freshly-prepared GaP:N single crystals completely suppress their luminescence at room temperature, which is very bright in the same, but aged perfect crystal.With the lapse of time driving forces such as impurity diffusion, strain relaxation, and thermodynamic minimization of the free energy associated with properly directed chemical bonds can result in an ordered distribution of impurity and host atoms. Evaluation of the characteristic time of such reordering, based on the known Ising model, suggests that the time for the substitution reaction associated with N diffusion along P sites in GaP:N is about 15 years at room temperature [1]. Accordingly, observations ...

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Excitons in highly optically excited gallium phosphide

Cited by 17 publications

References 9 publications

Long‐Term Convergence of Bulk‐ and Nano‐Crystal Properties

Long‐Term Convergence of Bulk‐ and Nano‐Crystal Properties

Evolution of Luminescence from Doped Gallium Phosphide over 40 Years

Excitonic Crystal and Nanotechnology

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