Existence of extinction temperature in WSi<i>x</i> film growth from WF6 and SiH4: An indication of the role played by radical chain reactions

Microelectronic Engineering

et al. 2006

Section: Resultsmentioning

confidence: 60%

“…(1) Radical chain reactions in the gas phase dominate the formation of the film-growth species [18] and deposition can occur down to T sub = 40°C [19]. (2) The silicon content of WSi x films strongly depends on T sub .…”

Section: Introductionmentioning

confidence: 99%

Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6

Saito

Microelectronic Engineering

et al. 2006

“…The simulations were made without adjusting these rate parameters. To assess the accuracy of virtual experiments based on data obtained from small-scale experi- 3 6.18 473.72 WF 2 (SiH 3 ) 4 6.50 506.93 WF(SiH 3 ) 5 6.82 540.16 W(SiH 3 ) 6 7.12 573.44 ments to simulate actual conditions in full-scale reactors, it was important to do the simulations without adjusting parameters.…”

Section: Simulations Of a Cold-wall Reactormentioning

confidence: 99%

“…[3][4][5] Figure 1 shows a schematic of the experimental equipment used in the present work. The reactor was a glass tube heated by a resistive heater 10 to 22 cm long.…”

Section: Extraction Of Chemistry From Small-scale Experimentsmentioning

confidence: 99%

“…The mass and heat transfer characteristics of laminar flow in a tube are well known and the methods for determining the kinetic properties of the CVD process, including the rate-controlling step, temperature dependence, and concentration dependence have been established. [3][4][5] In prior work, we used the axial profiles of film growth rates for different reactor diameters, species concentration, temperature, and residence time to determine the reaction mechanism and rate constants.The second step is to make virtual experiments with a full-scale reactor. By virtual experiment, we mean the process of evaluating different reactor designs and operating conditions using numerical simulations that include all relevant mass and heat transport, coupled with the chemistry.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Chemical Vapor Deposition Reactor Design Using Small‐Scale Diagnostic Experiments Combined with Computational Fluid Dynamics Simulations

Chae

et al. 1999

J. Electrochem. Soc.

Self Cite

A numerical method for designing chemical vapor deposition (CVD) reactors is proposed, which consists of three steps: extraction of the chemical mechanism and reaction rates using small-scale, well-defined experiments; prototyping a large-scale reactor using this chemistry combined with computational fluid dynamic (CFD) simulations (we call these virtual experiments); and experimental optimization of a prototype reactor designed from the virtual experiments. This design methodology was validated using the model CVD process of low-pressure CVD (LPCVD) of tungsten silicide (WSi x ) from WF 6 and SiH 4 in the temperature range of 130-360ЊC. A tubular hot-wall reactor was used as the small-scale reactor for diagnosing the gas-phase and surface chemical mechanism. The CFD code FLUENT was used for the numerical simulations, and no fitting parameters were used in chemical reaction mechanisms. Simulations of the radial WSi x film growth rate and Si/W composition profiles on a 5 in. wafer in a cold-wall reactor agreed well with experimental measurements. Such comparisons indicate that numerical reactor design can replace currently used empirical design methods.Chemical vapor deposition (CVD) is a process for producing materials from gas-phase reaction and depositing them as thin films. CVD processes are available for producing organic and inorganic materials, metallic and nonmetallic compounds, oxide and nonoxide materials, electrical conductors, semiconductors, and insulators. Recent demand for high-performance components, including electronic and optical devices, sensors, and coatings have increased the importance of CVD processes in device fabrication. However, the design of CVD reactors is tedious, because current design methods rely on trial-and-error development based on accumulated empirical experience. To develop a new CVD process, substantial time is required to empirically determine reactor configuration and operating conditions for optimizing the production efficiency. 1 In particular, such an approach is difficult to apply to the design of a reactor with complex geometry for large-diameter wafers. Therefore, a systematic design method for CVD reactors is needed.The essential mechanisms in CVD processes are the transport of mass, momentum, and energy, coupled with gas-phase and surface chemical reactions. Although many computational fluid dynamics (CFD) codes exist for solving such a coupled set of processes, the lack of reaction-rate data for many chemical systems has prevented routine application of CFD simulations to CVD reactor design. 2 For this reason, our group has developed several experimental methods for extracting the essential chemical reaction mechanisms from the complex phenomena of CVD processes. 3-5 We coupled these chemical reaction mechanisms with CFD codes, permitting simulation of the complete processes in CVD reactors. 6 Our ability to simulate the combined processes in CVD reactors suggests the following design method 1. Extraction of chemistry from well-defined, small-scale experimental r...

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Kinetic study of WSi_x‐CVD processes—a comparison of WF₆/SiH₄ and WF₆/Si₂H₆ reaction systems

Saito

Electron Comm Jpn Pt II

et al. 1995