Exoelectron emission from silicon nanocrystals

Rosenman, G.; Aronov, D. A.; Molotskii, M.; Roizin, Yakov; Heiman, A.; Mei, Wan Yuet; Blank, Rene de

doi:10.1063/1.2177375

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…TSEE was applied to study the surface characteristic of Por-Si [18]. From observing a high-temperature TSEE from charged silicon nanocrystals with nitride surface embedded into the amorphous Si02 matrix, the high activation energy of electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention [19].…”

Section: Exoelectron In Nanometermaterialsmentioning

confidence: 99%

Low energy electron technology study

Yuan

Yan

Jian-hui

2010

2010 International Conference on Mechanical and Electrical Technology

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A brief general introduction to a novel low energy electron-exoelectron was given. Various emission methods of induced solid were involved. More detailed consideration was given to these following topics: classification of exoelectron emission mechanisms; emission models of exoelectron; applications of exoelectron; the appplication of metal micro crack predicting by low energy electron technology was especially described; and finally many issues demanding prompt solution for low energy electron technology were proposed.Keywords-exoelectron emission, Auger emission, model, mechanism I . I NTRODUCTION Exoelectron (EE) is different from photoelectron and hot electron, with the average energy ofO.3� O.7eV. Emission of slow electrons at room temperature, initiated by preliminary exposure of oxide surfaces of metals to radiation, was first observed by Tanaka. Kramer [1] extensively studied emission of slow electrons from metal oxides after mechanical treatment (grinding, twisting, stretching, etc.) as well as from non-metals after they had been exposed to photon and electron radiation. Assuming that this emission is connected with exothermal processes involving the compensation of irregularities caused by excitation, Kramer called it "Exoelectron Emission (EEE)". Although this hypothesis was not proved, it was decided to call this emission "EEE" or "the Kramer effect", and the emitted electrons "exoelectrons". The modem definition of EE is the non-equilibrium, non-stationary emission of low energy electrons from the surface of solid during relaxation, after excitation/irradiation of the sample [2]. The most up-to-date methods are used for studying EE, the measurement precision has increased, and EE now has a wide range of applications. II . V ARIOUS E MISSION M ETHODS OF I NDUCED S OLIDIt has become clear that there cannot be one, nor can there be a common explanation for all the processes of EEE. The problem is that EEE is usually associated with a group of phenomena with different origins, accompanied by a relatively weak emission of low energy electrons at low temperatures. Low energy EEE from solids is caused by the non-stationary processes occurring within and on the surface. They are:978-1-4244-8102-6/10/$26.00

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Section: Exoelectron In Nanometermaterialsmentioning

confidence: 99%

Low energy electron technology study

Yuan

Yan

Jian-hui

2010

2010 International Conference on Mechanical and Electrical Technology

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“…1. 11 First of all, in this model a fraction of the trapped electrons at shallow trap levels located beneath the conduction band edge of MgO are thermally excited to the conduction band. The trap levels in MgO film have been estimated or measured 10,12 to be in the range of 0.1-0.5 eV.…”

Section: A Theoretical Model For Exo-electron Emission and Experimentmentioning

confidence: 99%

Parameters influencing exo‐electron emission currents from MgO film of ACPDPs

2010

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Abstract— A theoretical model of exo‐electron emission kinetics was developed by considering back‐diffusion and the gas‐amplification phenomena. Using the model, the effects of temperature, trapped electron concentration, trap energy level, and trap concentration on the exo‐electron currents were predicted and compared with experimental results. The theoretically predicted values agreed reasonably well with the trends of the measured results.

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Modeling of programming time of nanocrystal flash memory cells

Singaraju

Venkat

2008

Physica E: Low-dimensional Systems and Nanostructures

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Exoelectron emission from silicon nanocrystals

Cited by 4 publications

References 26 publications

Low energy electron technology study

Low energy electron technology study

Parameters influencing exo‐electron emission currents from MgO film of ACPDPs

Modeling of programming time of nanocrystal flash memory cells

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