Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet

Electrical field and temperature effects in 2D‐2D resonant tunneling diodes based on cubic InGaN/AlGaN

“…From the results presented above (Fig. 2(b)), it is clear that we expect to observe resonant tunneling through the quantized subbands in QW 3 and QW 2 for electric field-values close to 77 and 194 kV/cm, respectively. Moreover, we note that the two first energy levels in the emitter (QW 3 ) e 13 and e 23 cross the Fermi level in the emitter at F approximately equal to 110 and 60 kV/cm, respectively and above these values they become practically unpopulated.…”

“…3. At zero bias, we can observe that the local electron density presents the same values in QW 3 and in QW 1 ; however, it appears negligible in QW 2 . Under applied bias, we note that the external electric field redistributes the charge in the structure.…”

“…(iv) As it is mentioned above, at F close to 130 kV/cm no more quantized levels are confined and additionally the tunneling process tends to saturate for temperatures above 500 K. contain two confined populated levels respectively yet the center quantum well (QW 2 ) is practically unpopulated. When external bias is applied, a 2D-2D resonant tunneling process occurs and leads to a charge transfer between QW 1 and QW 3 . In computing the electron density per QW, results show that the later parameter is sensitive to the applied field and also to the temperature.…”

“…This charge transfer is established in the opposite direction to F and is attributed to the resonant tunneling process through the two barriers. In fact, when increasing the electric field, an energy level in QW 3 shifts progressively and can be aligned with that of the QW 2 . As a result, resonant tunneling can be revealed leading to a 2D-2D electron transfer.…”

“…1 Introduction During the last decades, there have been increasingly high levels of commercial and scientific interest in nitride semiconductors [1][2][3]. The group IIInitrides (AlN, GaN and InN and their alloys AlGaN and InGaN) has attracted immense attention owing to their outstanding properties such as wide bandgap energy, large bandgap discontinuity, high peak electron velocity, high saturation electron velocity, and high thermal stability.…”