Expedient method of obtaining interface state properties from MIS conductance measurements

Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

“…To correct for the effect of series resistance on the capacitance and conductance, the following equations can be used [19][20][21][22]:…”

“…These values were calculated from measured capacitance and conductance values of at the accumulation region [21][22][23][24]. The plot shows a peak, wherein the peak position changes with increased frequency.…”

“…For the former the intersection of the resulting curve on the voltage axis is sufficient. For space charge density ( ) the slope of the plot can be fitted to the following relationship [16,[19][20][21][22][23][24]:…”

Differential capacitance-voltage profiling of Schottky barrier diodes for measuring implanted depth distributions in silicon

“…Capacitance-voltage measurements at a fixed frequency provide a method of determining fixed charge density in the insulator region, interface density, insulator thickness, and impurity density in the semiconductor region. Combined with capacitance measurements versus frequency at fixed biases, these measurements can be used to determine surface potential, standard deviation of surface potential, and interface state density and majority carrier cross section as a function of surface potential [25,26]. For these reasons, automatic C-V plotting instruments have been developed, particularly for the evaluation of impurity density versus distance in Schottky and junction devices, for example, the second harmonic method of Copeland [27]; the mixed frequency technique of Baxandall [28]; and the techniques of Gordon, Stover, and Harp [29];…”

“…Several C-V profiles that show the nature of the loss of data caused by voltage breakdown C-V profiles and Schottky barrier data for four metallization systems on p-type,~100 Q'cm implanted silicon surfaces 26 10.…”