Experience with the new compact MEXTRAM model for bipolar transistors

Graaff, H.C. de; Kloosterman, W.J.; Geelen, J.A.M.; Koolen, M.C.A.M.

doi:10.1109/bipol.1989.69501

Cited by 20 publications

(3 citation statements)

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“…In order to quantify the maximum small-signal oscillation frequency of the three ring oscillator topologies, an automatic circuit optimizer was used. All transistors where modeled with the MEXTRAM transistor model [9] to include all high-frequency parasitics effects. The optimization goal was simply to maximize the oscillation frequency.…”

Section: B Simulation Of the Maximum Oscillation Frequencymentioning

confidence: 99%

A 9.8-11.5-GHz quadrature ring oscillator for optical receivers

Tang

Kasperkovitz

Roermund

2002

IEEE J. Solid-State Circuits

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Section: B Simulation Of the Maximum Oscillation Frequencymentioning

confidence: 99%

A 9.8-11.5-GHz quadrature ring oscillator for optical receivers

Tang

Kasperkovitz

Roermund

2002

IEEE J. Solid-State Circuits

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“…All transistors where modeled with the MEXTRAM transistor model [156] to include all high-frequency parasitics effects. The optimization goal was simply to maximize the oscillation frequency.…”

Section: Simulation Of the Maximum Oscillation Frequencymentioning

confidence: 99%

High-Frequency Oscillator Design for Integrated Transceivers

Tang¹

2005

The International Series in Engineering and Computer Science

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“…the University of California, San Diego (UCSD) model [UCS00], the Agilent model 1.1 Large-signal modeling [Agi04,Iwa03], the Ferdinand Braun Institut (FBH) model [Rud05], the MEXTRAM model [Gra89] and finally, the HICUM model [Sch02].…”

Section: Analytical Modelingmentioning

confidence: 99%

X-parameters based analytical design of non-linear microwave circuits Application to oscillator design

Pérez¹

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In linear world, classical microwave circuit design relies on the s-parameters due to its capability to successfully characterize the behavior of any linear circuit. Thus the direct use of s-parameters in measurement systems and in linear simulation analysis tools, has facilitated its extensive use and success in the design and characterization of microwave circuits and subsystems. Nevertheless, despite the great success of s-parameters in the microwave community, the main drawback of this formulation is its limitation in the behavior prediction of real non-linear systems.Nowadays, the challenge of microwave designers is the development of an analogue framework that allows to integrate non-linear modeling, large-signal measurement hardware and non-linear simulation environment in order to extend s-parameters capabilities to non-linear regimen and thus, provide the infrastructure for non-linear design and test in a reliable and efficient way. Recently, different attempts with the aim to provide this common platform have been introduced, as the Cardiff approach and the Agilent X-parameters. Hence, this Thesis aims to demonstrate the X-parameter capability to provide this non-linear design and test framework in CAD-based oscillator context. Furthermore, the classical analysis and design of linear microwave transistorbased circuits is based on the development of simple analytical approaches, involving the transistor s-parameters, that are able to quickly provide an analytical solution for the input/output transistor loading conditions as well as analytically determine fundamental parameters as the stability factor, the power gain contours or the input/output match. Hence, the development of similar analytical design tools that are able to extend s-parameters capabilities in small-signal design to non-linear apv plications means a new challenge that is going to be faced in the present work.Therefore, the development of an analytical design framework, based on loadindependent X-parameters, constitutes the core of this Thesis. These analytical nonlinear design approaches would enable to significantly improve current large-signal design processes as well as dramatically decrease the required design time and thus, obtain more efficient approaches. vi VUBVrije Universiteit Brussel.

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Experience with the new compact MEXTRAM model for bipolar transistors

Cited by 20 publications

References 0 publications

A 9.8-11.5-GHz quadrature ring oscillator for optical receivers

A 9.8-11.5-GHz quadrature ring oscillator for optical receivers

High-Frequency Oscillator Design for Integrated Transceivers

X-parameters based analytical design of non-linear microwave circuits Application to oscillator design

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