Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Abstract

Experiments and simulation studies on 283-MeV I ion induced single event effects of SiC MOSFETs were carried out. When the cumulative irradiation fluence of SiC MOSFET reaches 5×106 ion·cm-2, the drain-gate channel current increases under 200 V drain voltage, the drain-gate channel current and the drain-source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain-gate channel current and drain-source channel current was found to have drain-gate channel current leakage point and local source metal melt, the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining Monte Carlo simulation and TCAD electrothermal simulation, it is found that the initial area of single event burnout may occur at the source-gate corner or the substrate-epitaxial interface, electric field and current density both affect the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain-source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain-gate channel damage.

Proton induced radiation effect of SiC MOSFET under different bias

“…The internal structure and material composition of the devices selected in this paper are consistent with those in Ref. [13]. In the experiment, protons are incident perpendicularly from the front of SiC MOSFET, and then successively pass through the aluminum metal source electrode, SiO 2 , polysilicon gate, oxide, SiC epitaxial layer and substrate.…”

“…The specific model and production batch of SiC MOSFET are consistent with SiC MOSFET used in the Ref. [13], so the structure and parameters of the TCAD model of SiC MOSFET constructed by us are consistent with those in the Ref. [13].…”

“…[13], so the structure and parameters of the TCAD model of SiC MOSFET constructed by us are consistent with those in the Ref. [13]. In the simulation, we do not consider the electric thermal model, and other physical models are considered.…”

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

“…Shoji et al [22] was one of the first to propose a failure mechanism opposing the conventional ideas previously documented for the SiC MOSFET. The similar failure characteristics between the SiC JBS (does not have parasitic BJT) and SiC MOSFET (does have parasitic BJT) support the claims made, and since then many studies have supported [8,[23][24][25][26] and refuted the parasitic BJT [20,22,[27][28][29][30][31] as the regenerative failure mechanism responsible for SEB in SiC MOSFET.…”

Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control

“…Up to now, many studies have investigated the impacts of heavy-ion irradiation in silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) power devices through both experiments and simulations [10][11][12]. Recently, there are some reports that deal with the heavy-ion irradiations on lateral power Ga 2 O 3 MOSFETs [13][14][15].…”