Experiment planning, mathematical modelling, and nonlinear optimization of the ion-nitriding process in a glow-discharge plasma

Petruš, Ondrej; Popa, G.; Kühn, S.

doi:10.1007/bf00633132

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1988

1990

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“…In order to satisfy all of the process requirements which are listed above, process parameters were derived from response-surface methodology experiments [23]. The procedures and advantages of these techniques for process development with complex, multiparameter systems have been discussed elsewhere [23]- [26]. wafers.…”

Section: Introductionmentioning

confidence: 99%

Planarization of dielectric layers for multilevel metallization

Riley

Castel

1988

IEEE Trans. Semicond. Manufact.

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A process to planarize low-pressure chemical-vapor deposition (LPCVD) SiO, films formed over the abrupt topography of fine-line (2.0-pm pitch) integrated circuits with two levels of metallization and pillar interconnections has been developed with sacrificial photoresist and plasma etching using response-surface methodology. To produce flat dielectric surfaces with this topography, the ratio of the measured etch rate of photoresist to that of phosphorus-doped SiO, must be maintained at -0.4 (3800 and 9100 A/min, respectively) with an Ar/CF4/OZ high pressure plasma generated in a low radio-frequency etching system.

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Section: Introductionmentioning

confidence: 99%