2004
DOI: 10.1088/0953-8984/16/31/007
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Experimental analysis of the optical gain and linewidth enhancement factor of GaInNAs/GaAs lasers

Abstract: The gain and α-factor spectra of a molecular-beam-epitaxy-grown 1.3 µm GaInNAs laser are experimentally determined using the method of Hakki and Paoli and a transmission method. The gain in our structure is due to inhomogeneously broadened band-band transitions but, in general, critically depends on the growth process. The value 2.5 for α at the laser emission wavelength clamps with increasing injection current.

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“…Measurements of gain spectra and linewidth enhancement factors ͑LWEF͒ have been performed for a 1.3 m GaInNAs structure. 5 The same quantities have been calculated in the GaInNAs material system using a free carrier [6][7][8] as well as a many-body theory. [9][10][11][12] Gain characteristics for 1.3-m-wavelength GaInNAs, InGaAlAs, and InGaAsP, 13 as well as gain and threshold properties of lattice-matched Ga 1−y In y N x As 1−x / GaAs for different values of x and y 10,14,15 have been investigated.…”
mentioning
confidence: 99%
“…Measurements of gain spectra and linewidth enhancement factors ͑LWEF͒ have been performed for a 1.3 m GaInNAs structure. 5 The same quantities have been calculated in the GaInNAs material system using a free carrier [6][7][8] as well as a many-body theory. [9][10][11][12] Gain characteristics for 1.3-m-wavelength GaInNAs, InGaAlAs, and InGaAsP, 13 as well as gain and threshold properties of lattice-matched Ga 1−y In y N x As 1−x / GaAs for different values of x and y 10,14,15 have been investigated.…”
mentioning
confidence: 99%