1989
DOI: 10.1016/0921-5107(89)90076-7
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Experimental and calculated range moments of deep implants

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Cited by 9 publications
(5 citation statements)
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“…From figure 1 it is found that the TRIM'91 code describes the shape of the front part of the experimental depth distribution of H in KTiPO 4 well, but does not describe the shape of the deep side of the depth distribution. Also this phenomenon is similar to the report by Weiser et al [15] for the concentration profile of 0.17 MeV 1 H implant in amorphous silicon by the H( 15 N, α) 12 C nuclear reaction. This phenomenon is similar to the case of 500 keV B + implanted into Si by Fink et al [16].…”
Section: Resultssupporting
confidence: 92%
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“…From figure 1 it is found that the TRIM'91 code describes the shape of the front part of the experimental depth distribution of H in KTiPO 4 well, but does not describe the shape of the deep side of the depth distribution. Also this phenomenon is similar to the report by Weiser et al [15] for the concentration profile of 0.17 MeV 1 H implant in amorphous silicon by the H( 15 N, α) 12 C nuclear reaction. This phenomenon is similar to the case of 500 keV B + implanted into Si by Fink et al [16].…”
Section: Resultssupporting
confidence: 92%
“…Figure 1 shows the concentration distribution versus the depth of 40 keV H + implanted into KTiOPO 4 by the 15 N nuclear reaction method. The distribution is nearly Gaussian, but slightly asymmetric.…”
Section: Resultsmentioning
confidence: 99%
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