Zintl phases are excellent candidates for high-efficiency thermoelectrics (TEs) due to their extremely low lattice thermal conductivity. The manufacturing of an all-Zintl module is particularly attractive for practical applications, as it alleviates concerns regarding the electronic, thermal, and mechanical compatibility of the p-and n-type legs. To date, a large majority of Zintl phases have been realized as p-type TE materials. Our recent discovery of n-type transport in Ba-doped KAlSb 4 and KGaSb 4 has helped demonstrate the potential of n-type Zintl thermoelectrics. In this paper, we report the experimental discovery of 4 ABX 4 Zintl phases: RbAlSb 4 , RbGaSb 4 , CsAlSb 4 , and CsGaSb 4 . Transport measurements on Ba-doped RbGaSb 4 and CsGaSb 4 demonstrate near glassy lattice thermal conductivity (<0.5 W m −1 K −1 , 350 °C) and lightly doped n-type transport. However, the doping efficiency of Ba in RbGaSb 4 and CsGaSb 4 is significantly impeded when compared to our prior work on KGaSb 4 . To investigate the underlying mechanism, we performed first-principles defect calculations and found that the effect of compensating alkali metal vacancies increases in the Rb-and Cs-based analogues. Considering the TE potential of the known ABX 4 n-type materials, we have also performed a computational survey over 27 plausible compositions where A = (K, Rb, Cs), B = (Al, Ga, In), and X = (As, Sb, Bi) to investigate the effect of chemistry on potential TE performance.