Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide

Abstract

Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism.

Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm

“…As the refractive index increases, the value of the blueshift also increases following the parabolic trend, up to the maximum value of ϳ65 meV for the fundamental transition in the case where n = 1.66 ͑and n = 1.69 for lh1-e1͒. 61 This mechanism will produce intermixing through As-P exchange. 58 Good correlation between the amount of Ga ͑and In͒ incorporated into the dielectric film with the amount of blueshift have been shown for various annealing temperatures and times, 34 meaning that a dissolution of group-III species into the dielectric films directly correlates with the physical process that enhances the QWI.…”

Augmented Student Participation in Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs

“…26 Similarly, annealing LT-GaAs delta-doped with Sb was found to produce substantially greater compositional intermixing than annealing conventional stoichiometric GaAs similarly delta-doped. 27 This enhancement of As-Sb interdiffusion was attributed to an oversaturation of arsenic interstitials in the LT GaAs samples, resulting from the balance of arsenic interstitials with arsenic clusters and all the other excess-arsenic-containing defects in the material.…”

Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

“…If g · b =0 ͑e.g., dislocations do not terminate the fringe͒, another reflection ͑e.g., ͕113͖͒ has to be set. 47,48 To verify this hypothesis, a comparison was undertaken of the compositional profile at the InGaP / In x Ga 1−x As interface in the current samples with one where LT-InGaP was grown on GaAs as the last growth step, such that this interface was only subjected to the low-temperature ͑245°C͒ growth. Figure 3 shows the ͑111͒ WBDF image of InGaAs/ LT-InGaP / GaAs specimen along the ͓110͔ direction.…”