Abstract:Using an atomic force microscope, the running-in process of a single crystalline silicon wafer coated with native oxide layer (Si-SiO x ) against a SiO 2 microsphere was investigated under various normal loads and displacement amplitudes in ambient air. As the number of sliding cycles increased, both the friction force F t of the Si-SiO x /SiO 2 pair and the wear rate of the silicon surface showed sharp drops during the initial 50 cycles and then leveled off in the remaining cycles. The sharp drop in F t appeared to be induced mainly by the reduction of adhesion-related interfacial force between the Si-SiO x /SiO 2 pair. During the running-in process, the contact area of the Si-SiO x /SiO 2 pair might become hydrophobic due to removal of the hydrophilic oxide layer on the silicon surface and the surface change of the SiO 2 tip, which caused the reduction of friction force and the wear rate of the Si-SiO x /SiO 2 pair. A phenomenological model is proposed to explain the running-in process of the Si-SiO x /SiO 2 pair in ambient air. The results may help us understand the mechanism of the running-in process of the Si-SiO x /SiO 2 pair at nanoscale and reduce wear failure in dynamic microelectromechanical systems (MEMS).