Experimental and dynamical study of a dual Q-switched intracavity OPO based on few-layer MoSe<sub>2</sub>SA

Wang, Jing; Pang, Jinbo; Liu, Shipeng; Zhang, Haikun; Tang, Wenjing; Xia, Wei

doi:10.1364/oe.27.036474

Cited by 19 publications

(9 citation statements)

References 55 publications

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“…In this formula, w l is the average beam radius of the fundamental light.

where

( j = s , i ) represents the intracavity photon densities of the signal light and idler light;

( j = g , a , y ) represents the fundamental light intracavity photon densities at the positions of Nd: YVO 4 crystal, AO crystal, and PtS 2 SA, respectively [ 33 ]; w j ( j = g , a , y ) represents the radius of the TEM 00 mode in the abovementioned three positions. The relationship between the photon densities and the electric field is represented by

.…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

“…The IOPO rate equation with the saturable absorption characteristic of PtS 2 SA is obtained by referring to the previous research work [ 26 , 27 , 32 , 33 ].

…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

“…δ a ( t ) is used to describe the loss function of the gradual AO modulator (AOM) caused by the exponential time delay. The basic parameters for calculating the rate equation refer to previous work [ 32 , 33 , 34 , 35 ].…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

“…σ g and σ e are the ground-state and excited-state absorption cross-sections of SA, which are essential parameters to characterize saturable-absorption properties of SA. By using the information in reference [ 33 ], we can obtain the relationship between them.

…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

“…Then, the values of σ g and σ e for the 6.2 nm-thickness PtS 2 SA can be estimated to be 6.4298 × 10 −19 cm −2 and 2.5927 × 10 −19 cm −2 . Considering the inhomogeneously broadening mechanism, the excited-state lifetime of PtS 2 is calculated to be 1.043 ms [ 33 ]. Table 1 demonstrates the calculated key parameters of PtS 2 SA.…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

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Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Wang

Guo

et al. 2022

Nanomaterials

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A 6.2 nm-thickness platinum disulfide (PtS2) film was prepared by electron beam evaporation with post vulcanization. The nonlinear transmittance was measured by power scanning method and the modulation depth is fitted to be 13%. Based on the transmittance curve, saturable absorption parameters of PtS2 are calculated with inhomogeneously broadening mechanism, including 6.4298 × 10−19 cm−2 ground-state absorption cross-section, 2.5927 × 10−19 cm−2 excited-state absorption cross-section, and 1.043 ms excited-state lifetime. The PtS2 film combined with active time management was implemented to modulate the fundamental light of optical parametric oscillator (OPO). Owing to the nonlinear absorption property of PtS2, the operation of Q-switched OPO was optimized in both the experiment and dynamical theory. In particular, the conversion efficiency was experimentally improved by 13.2%. The pump-to-signal conversion efficiency went up to 3.29%, which is the highest conversion value reported so far. The theoretical values fit the experiment well, which are from the Gaussian rate equations with PtS2’s saturable-absorption characteristic.

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“…In this formula, w l is the average beam radius of the fundamental light.

where

( j = s , i ) represents the intracavity photon densities of the signal light and idler light;

.…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

“…The IOPO rate equation with the saturable absorption characteristic of PtS 2 SA is obtained by referring to the previous research work [ 26 , 27 , 32 , 33 ].

…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

…”

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

Section: Theoretical Evaluation Of Iopo With 62 Nm-thick Pts ...mentioning

confidence: 99%

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Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Wang

Guo

et al. 2022

Nanomaterials

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Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

Sun

Pang

Cheng

et al. 2021

Adv Materials Technologies

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The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer‐scale, which is compatible with the Si‐based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer‐scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer‐scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch‐to‐batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO2. The electronic transport and transparent conductance of the wafer‐scale graphene are compared with high‐quality single crystal. The progress and proof‐of‐the‐concept are briefly recalled in graphene‐based electronics such as transistors, sensors, integrated circuits, and spin transport valves. Eventually, the readers are provoked with the current challenges as well as the future opportunities.

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WSe₂ 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

Cheng

Pang

et al. 2020

InfoMat

157

100

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The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides. Similar to graphene, WSe2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers. First, the readers are presented with the fundamentals of WSe2, such as types, morphologies, and properties. Here, we report the characterization principles and practices such as microscopy, spectroscopy, and diffraction. Second, the methods for obtaining high‐quality WSe2, such as exfoliation, hydrothermal and chemical vapor deposition, are briefly listed. With advantages of light weight, flexibility, and high quantum efficiency, 2D materials may have a niche in optoelectronics as building blocks in p‐n junctions. Therefore, we introduce a state‐of‐the‐art demonstration of heterostructure devices employing the p‐type WSe2 semiconductor. The device architectures include field‐effect transistors, photodetectors, gas sensors, and photovoltaic solar cells. Due to its unique electronic, optical, and energy band properties, WSe2 has been increasingly investigated due to the conductivity of the p‐type charge carrier upon palladium contact. Eventually, the dynamic research on WSe2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community.image

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Experimental and dynamical study of a dual Q-switched intracavity OPO based on few-layer MoSe₂SA

Cited by 19 publications

References 55 publications

Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

WSe₂ 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

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Experimental and dynamical study of a dual Q-switched intracavity OPO based on few-layer MoSe2SA

Cited by 19 publications

References 55 publications

Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Investigations of 2D PtS2’s Saturable Absorption Characteristic and Its Optimization to OPO’s Operation

Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

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Product

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Experimental and dynamical study of a dual Q-switched intracavity OPO based on few-layer MoSe₂SA

WSe₂ 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications