Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

Abstract

Memristive devices relying on redox-based resistive switching mechanisms represent promising candidates for the development of novel computing paradigms beyond von Neumann architecture. Recent advancements in understanding physicochemical phenomena underlying resistive switching have shed new light on the importance of an appropriate selection of material properties required to optimize the performance of devices. However, despite great attention has been devoted to unveiling the role of doping concentration, impurity type, adsorbed moisture, and catalytic activity at the interfaces, specific studies concerning the effect of the counter electrode in regulating the electronic flow in memristive cells are scarce. In this work, the influence of the metal–insulator Schottky interfaces in electrochemical metallization memory (ECM) memristive cell model systems based on single-crystalline ZnO nanowires (NWs) is investigated following a combined experimental and modeling approach. By comparing and simulating the electrical characteristics of single NW devices with different contact configurations and by considering Ag and Pt electrodes as representative of electrochemically active and inert electrodes, respectively, we highlight the importance of an appropriate choice of electrode materials by taking into account the Schottky barrier height and interface chemistry at the metal–insulator interfaces. In particular, we show that a clever choice of metal–insulator interfaces allows to reshape the hysteretic conduction characteristics of the device and to increase the device performance by tuning its resistance window. These results obtained from single NW-based devices provide new insights into the selection criteria for materials and interfaces in connection with the design of advanced ECM cells.

Quantum Conductance and Temperature Effects in Titanium Oxide-Based Memristive Devices

“…This is in line with the previously reported temperature-dependent resistance of TiO 2 memristors [33]. Further work will be necessary to disentangle the effect of Schottky metal-insulator interfaces and the insulator itself in the R-T characteristics [36], [37].…”

Light and voltage dual-modulated volatile resistive switching in single ZnO nanowires

“…The current-voltage (I-V ) curve of ZnO nanowire in the dark state is shown in the blue curve in figure 1 (c), with a current of about 10 pA at a bias voltage of 1 V. When the voltage between the source and drain increased to 20 V, no RS behavior occurred. Although the RS behavior based on ZnO nanostructures has been observed in some studies [17,18,[20][21][22][23], traditional RS based on the mechanism of conductive filaments is difficult to appear in our devices. This is probably due to our unique planar structure of the devices and up to 40-100 μm conductive channel between the two Ag electrodes.…”

Computing of neuromorphic materials: an emerging approach for bioengineering solutions

“…Academic researchers persist in investigating diverse materials, device architectures, and fabrication procedures to augment the performance and dependability of these devices for practical applications in neuromorphic systems. 233…”