Experimental and Numerical Investigations of the Warpage of Fan-Out Wafer-Level Packaging With SAW Filters

Li, Wei

doi:10.1109/tcpmt.2022.3165638

Cited by 6 publications

(2 citation statements)

References 24 publications

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“…Warpage resulted from the mismatch of coefficient of thermal expansion among different materials (Xu et al , 2020; Li and Yu, 2022). It cannot be prevented during WLP process because the whole process involved many materials (Si, Cu, resin film, PR and PI) and repeated heating.…”

Section: Fabrication Processmentioning

confidence: 99%

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Zhao,

Pang,

Wang

et al. 2023

SSMT

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Purpose This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss. Design/methodology/approach An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples. Findings The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth. Originality/value The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.

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Section: Fabrication Processmentioning

confidence: 99%

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Zhao,

Pang,

Wang

et al. 2023

SSMT

View full text Add to dashboard Cite

show abstract

“…Fortunately, Fan-Out Wafer-Level Packaging (FOWLP) is the latest tailored and effective solution for foundries and integrated device manufacturers (IDMs) to update the device performance and minimize the package volume and gap between die and substrate [2]. Generally, FOWLP is an upgrade and extension of wafer level packaging (WLP), which, combined with the redistribution layers (RDL), provides higher input and output (I/O) capabilities, substrate-less package, lower thermal resistance, and lower parasitic effects [3,4]. However, numerous details about the potential crisis of LiTaO 3 -based SAW filters in the FOWLP remain unclear, wherein the wafer level molding process is pivotal to realize high yield [5].…”

Section: Introductionmentioning

confidence: 99%

Synthesized Improvement of Die Fly and Die Shift Concerning the Wafer Molding Process for Ultrafine SAW Filter FOWLP

2023

Electronics

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As the surface acoustic wave (SAW) filters incline to ultrafine, the failures resulting from the wafer molding process have become increasingly prominent. A methodology for coupling the mechanisms of die fly and die shift for the SAW filter miniatured with 737 μm× 517 μm× 200 μm is developed for the trade-off between reliability and yields. In terms of die fly and die shift, the former occurs before the epoxy molding compound (EMC) is cured in the temperature rise period, while the latter occurs in the cooling stage after being cured. The die fly is induced by the fluid flow force in the high-temperature stage of heat compression, which is fatal for the scrap. Followed by the cooling stage, the CTE (coefficient of thermal expansion) misalignment between the die and epoxy molding compound (EMC) seriously affects the die shift and the following lithography process yields. The debonding critical energy in the mixed mode is employed to avert the die fly. Then, the die fly can be shunned by fine-tuning the die thickness, die layout, and EMC layout. A methodology to measure die shift was conducted, by which a total of 47,568 dies were embedded using compression molding. The mechanical error of the mounter and the die shift law are comprehensively leveraged, indicating that the die shift can be controlled within 50 μm for 8-inch wafer-level packaging.

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On the optimization of molding warpage for wafer-level glass interposer packaging

Bao

et al. 2023

J Mater Sci: Mater Electron

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Experimental and Numerical Investigations of the Warpage of Fan-Out Wafer-Level Packaging With SAW Filters

Cited by 6 publications

References 24 publications

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Synthesized Improvement of Die Fly and Die Shift Concerning the Wafer Molding Process for Ultrafine SAW Filter FOWLP

On the optimization of molding warpage for wafer-level glass interposer packaging

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