Experimental and simulated estimation of new super resolution technique

Kamon, Kazuya

doi:10.1116/1.588614

Cited by 3 publications

(3 citation statements)

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“…3. filter can be simultaneously optimized for the resolution and side lobe effects. 4. filter is designed for its point spread function ( PSF ) performance, without any reference to the projection of the particular mask, and in this sense is the universal solution.…”

Section: R=k1-mentioning

confidence: 99%

DOF improvement by complex pupil filtering for DUV lithography

Jedrasik

1999

SPIE Proceedings

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We propose a method for the design of a complex optical element for use in lithographic system. It is based on optimization of the intensity point spread function of the lithographic projector. Increase in the depth of focus up to 3imIn comparison with unaltered pupil is demonstrated. This is achieved without introducing significant undesirable proximity effects ( theoretically, due to Gaussian representation of the filter, less than 7% of embedded distortions is possible ), and in such a way, control over the sidelobe level is achieved. The solution is universal, without any reference to the projection of the particular mask layout. The analytical representation of the filter allows for explicit optimization process. Practical realization of the filter based on statistical approach is presented. Limitations of the proposed approach are discussed.

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Section: R=k1-mentioning

confidence: 99%

DOF improvement by complex pupil filtering for DUV lithography

Jedrasik

1999

SPIE Proceedings

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“…3, a second highquality projection lens and an additional copy of the reticle are incorporated in the illumination system of a projection camera. 3 We have reanalyzed the two-mask two-lens RET and have found that it does improve the overall process window. This is followed by a second lens ͑L2͒, which projects an image of the reticle ͑M2͒ onto a resist coated wafer ͑W͒ in the usual way.…”

Section: Two-mask Resolution Enhancement Techniquementioning

confidence: 99%

Evaluation of a two-mask resolution enhancement technique

White¹,

Wood²

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have evaluated the performance of an optical projection lithography camera employing a two-mask resolution enhancement technique proposed by Matsumoto et al. ͓K. Matsumoto et al., Proc. SPIE 2197, 844 ͑1994͔͒ and Kamon et al. ͓K. Kamon et al., Jpn. J. Appl. Phys., Part 1 33,6848 ͑1994͔͒ in 1994 that automatically provides a different illumination for every feature on the reticle. Our simulations show that such a system can provide better imaging performance than a system that employs ordinary quadrupole illumination and can enhance the depth of focus by more than 50% in specific cases.

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“…[1][2][3][4][5][6][7][8][9][10][11][12] Chemically amplified resists are widely used in KrF or ArF lithography. In order to overcome limitations in photolithography, many researchers are making good efforts in surface imaging or ArF resist processing.…”

Section: Introductionmentioning

confidence: 99%

T-top forming simulation using percolation theory

Kamon

Nakazawa

Yamaguchi

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography J.In KrF or ArF resist processing, a chemically amplified resist is widely used for ultralarge scale integrated device fabrication. Decomposition ͑positive resist͒ or cross linking ͑negative resist͒ is amplified by an acid catalytic reaction during post-exposure baking ͑PEB͒. T-top forming becomes a serious problem in these resists. In resist simulation, to take these characteristics into account, percolation theory is introduced. The acid and product distributions during PEB are iteratively calculated. Thus, we can conclude that the acid and product distribution in resist films are time dependent. Moreover, a resist simulator that can take into account macroscopic feature changes from microscopic molecular structural change is necessary. From resist surface observation and slow positron annihilation measurements, free volume generation is confirmed. A new resist process model, including prebake, PEB, and development for chemically amplified resists is established by the cluster model. CPU time is 1 min each for a three dimensional image and for development, which is fast enough for practical evaluation use. The defocus dependence of the resist profile agrees well with the experiment. For chemically amplified resists, decomposition or cross linking proceeds vertically rather than horizontally. Thus, a rectangular resist profile can be obtained. Simulation results based upon this model can describe T-tops or resist bridges.

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Experimental and simulated estimation of new super resolution technique

Abstract: Articles you may be interested in X-ray mask fabrication technology for 0.1 μm very large scale integrated circuits

Cited by 3 publications

References 1 publication

DOF improvement by complex pupil filtering for DUV lithography

DOF improvement by complex pupil filtering for DUV lithography

Evaluation of a two-mask resolution enhancement technique

T-top forming simulation using percolation theory

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