1997
DOI: 10.1103/physrevb.55.r1958
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Experimental and theoretical approach to spin splitting in modulation-dopedInxGa1

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Cited by 555 publications
(431 citation statements)
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“…Heterostructures in which the 2DEG is formed by an asymmetric confining potential also exhibit the Rashba spin-orbit interaction 11 . As shown experimentally, the Rashba coupling strength can be tuned via proper gating of the structure 12,13 , which makes the Rashba interaction very appealing for potential technological applications involving spin control. More recently, yet a new type of spin-orbit interaction has been found in symmetric two-dimensional quantum structures with two subbands: the inter-subbandinduced spin-orbit coupling 14,15 .…”
Section: Introductionmentioning
confidence: 99%
“…Heterostructures in which the 2DEG is formed by an asymmetric confining potential also exhibit the Rashba spin-orbit interaction 11 . As shown experimentally, the Rashba coupling strength can be tuned via proper gating of the structure 12,13 , which makes the Rashba interaction very appealing for potential technological applications involving spin control. More recently, yet a new type of spin-orbit interaction has been found in symmetric two-dimensional quantum structures with two subbands: the inter-subbandinduced spin-orbit coupling 14,15 .…”
Section: Introductionmentioning
confidence: 99%
“…The gatetunable [2] Rashba s-o interaction [3] present in two-dimensional electron gases (2DEGs) formed in structurally asymmetric confining potentials offers such a possibility. The seminal proposal of Datta and Das [4] of a spin field effect transistor highlights the use of the Rashba spin-orbit interaction to coherently rotate spins.…”
Section: Introductionmentioning
confidence: 99%
“…5 shows the replot of the polarization as a function of L m , which indicates that finite polarization remains as long as L m exceeds the system length. The electron mean free path in the InGaAs 2DES channel exceeds 1µm in the wide range of the gate voltage, 4 and the spin filtering effect by nonuniform SOI strength is expected to survive in actually fabricated devices. We have also changed the distribution of the impurities to the binary distribution, where the site energy W i takes only two values, 0 and W > 0.…”
mentioning
confidence: 99%
“…1,2 To control the spin of electrons in semiconductors, the spin-orbit interaction (SOI) due to the lack of the inversion symmetry in two dimensional electron system (2DES) is quite useful since its strength can be controlled by an additional gate voltage. 3,4 The spin field-effect transistor proposed by Datta and Das is a hybrid structure of ferromagnetic electrodes (FM) and a semiconductor (SM) 2DES channel. 5 This hybrid device, however, requires a complex and careful fabrication process.…”
mentioning
confidence: 99%