Experimental and theoretical studies of indium oxide gas sensors fabricated by spray pyrolysis

Golovanov, V.; Mäki-Jaskari, Matti A.; Rantala, Tapio T.; Korotcenkov, Ghenadii; Brînzari, V.; Cornet, A.; Morante, J.R.

doi:10.1016/j.snb.2004.07.026

Cited by 96 publications

(15 citation statements)

References 36 publications

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“…[8][9][10][11] The origin of this difference might be related to the different oxygen partial pressures during the treatments. Instead, in accordance with the changes in valence band structure which are dominated by O 2p states, we posit that a change in oxygen coordination at the surface, possibly associated with the formation of surface peroxide species, as suggested by Golovanov et al, 16 These surfaces correspond to the bixbyite ͑111͒ surface, which is probably not relevant in the present case as the deposited thin films have a strong ͑100͒ texture. In addition, the difference may be related to the unique crystal/defect structure of bixbyite-based materials, which can easily accommodate excess oxygen, e.g., the well-known Frank and Köstlin clusters in bulk ITO.…”

supporting

confidence: 83%

“…In agreement with the changes in the valence band structure a possible explanation might be the presence of a surface peroxide species as proposed by Golovanov et al 16 It is remarkable that adding oxygen during deposition has a significantly different effect than air annealing. In particular, sintered ceramic specimens have considerably larger ionization potentials, and thus work functions, than typical thin film samples.…”

supporting

confidence: 78%

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Evidence for surface dipole modifications in In2O3-based transparent conductors

Harvey¹,

Mason²,

Körber³

et al. 2008

Applied Physics Letters

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Surface dipole modifications were identified for contamination-free In2O3-based transparent conducting oxides by ultraviolet photoelectron spectroscopy on both thin film and bulk ceramic specimens. In particular, heating in air was found to result in an increase in ionization potential and work function. The formation of surface dipoles may be related to the unique structure (crystal, defect) of bixbyite-based materials. These findings have important ramifications for the tuning of work functions in In2O3-based transparent conductors.

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supporting

confidence: 83%

supporting

confidence: 78%

Evidence for surface dipole modifications in In2O3-based transparent conductors

Harvey¹,

Mason²,

Körber³

et al. 2008

Applied Physics Letters

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“…This means that in weak fields the nanocrystalline SiC films possess ohmic mechanism of electrical conductivity over the entire voltage range. This behavior of semiconductors in weak electric fields is well known [14]. For the HP-nc-SiC series films, the current value on the current-voltage characteristics was always 3-5 times higher on average compared to the monopolytype ones at the same size, which may be due to the multi-channel mechanism of conductivity in nanoheterostructures and greater charge mobility in the rhombohedral polytype 21R-SiC, compared to the 3C-SiC cubic polytype.…”

Section: Methodsmentioning

confidence: 55%

“…During annealing, as the molecules of acceptors desorbed, electrons were released from the traps and filled the conduction band. Based on the literature [14] and obtained data on the temperature of the desorption of chemisorbed gases of atmospheric air, we have chosen 700 K as working temperature. At this temperature, the changes in the resistance of the films of both series in contact with the air atmosphere were measured.…”

Section: Resultsmentioning

confidence: 99%

Gas sensing properties of nanocrystalline silicon carbide films

Семенов

Kozlovskyi

Skorik

et al. 2019

Micro and Nano Syst Lett

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The influence of the air atmosphere on the electrical conductivity of nanocrystalline thin SiC films obtained by method of direct ion deposition on sapphire was studied. Measurements were performed on two series of nc-SiC films with different structure: one series contained mainly 3C-SiC polytype nanocrystals and were denoted as monopolytypic, the second series were a nanoheterostructures based on a mixture of 3C-SiC and 21R-SiC nanocrystals. Gas sensitivity of the films appeared after annealing in vacuum at temperatures above 500 K. Measurements of the gas sensitivity of the films to the air atmosphere at a temperature of 700 K showed that the resistance increased for 12 times for the monopolytype film, while the heteropolytype film showed an increase of resistance for almost 16 times. Keywords: Silicon carbide based gas sensors, Nanocrystalline silicon carbide film, Air effect on electrical resistance, Structure effect on air sensitivity © The Author(s) 2019. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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“…The data on the lifetime of the ozone molecule at various temperatures in Table 1 say that a real direct measurement of ozone is possible up to temperatures in the region of 250 C. Moreover, it should be noted that many substances, including silicon [15] and carbon [16], located on the surface of nc-SiC films, are catalysts for the decomposition of ozone at temperatures ranging from room temperature that can lead to an even greater reduction in ozone life compared to table data. We presume that the increase in resistance with a maximum in the region of 180 C is due to the combined action of strong oxidizing agents -ozone and its decomposition product oxygen.…”

Section: Resultsmentioning

confidence: 97%

Ozone Sensitive Properties of Thin Films of Nanocrystalline Silicon Carbide

Семенов¹,

Lubov²,

Makhonin³

2020

J. Nano- Electron. Phys.

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In this paper, we investigated the ability of nanocrystalline SiC films to detect ozone in an air mixture under atmospheric pressure for ozone concentrations of 0.1 mg/m 3 (maximum allowable concentration) and 4.0 mg/m 3. The ozone sensitivity coefficient S (О3) was estimated by the formula S (О3)  (Rg-Ra)/Ra, where Rg and Ra are respectively the film resistances in the presence and absence of ozone in the air atmosphere. The volume flow rate of the ozone-air mixture was 2 l/min. The temperature dependence of the ozone sensitivity coefficient S (O3) was studied in the temperature range 100-450 C. It was found that the maximum values of S (O3) + 0.71 and-0.80 were observed at temperatures of 280 C and 330 C, respectively, for both concentrations of ozone. Moreover, S (O3) had a positive sign for a temperature of 280 C and a negative value for 330 C. The different polarity of the change in the film resistance at given temperatures was due to the different ratio of redox reactions of ozone with atmospheric gases on the surface of nc-SiC films. Both temperatures can be used for detecting ozone with sensors on nc-SiC films, however, from the point of view of reducing energy consumption, operating temperature of 280 С looks more preferable.

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Experimental and theoretical studies of indium oxide gas sensors fabricated by spray pyrolysis

Cited by 96 publications

References 36 publications

Evidence for surface dipole modifications in In2O3-based transparent conductors

Evidence for surface dipole modifications in In2O3-based transparent conductors

Gas sensing properties of nanocrystalline silicon carbide films

Ozone Sensitive Properties of Thin Films of Nanocrystalline Silicon Carbide

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