2023
DOI: 10.1016/j.sse.2023.108716
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Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

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“…The experimental analysis of nanowire MOS transistors at high temperatures was presented in references 22–24. In these works, one can see the influence of several tunneling components on the device output characteristics.…”
Section: Analytical Models For the Drain And Gate Currents Of Nanowir...mentioning
confidence: 99%
“…The experimental analysis of nanowire MOS transistors at high temperatures was presented in references 22–24. In these works, one can see the influence of several tunneling components on the device output characteristics.…”
Section: Analytical Models For the Drain And Gate Currents Of Nanowir...mentioning
confidence: 99%