Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

Cassani, M.V.; Salomone, L. Sambuco; Carbonetto, S.; Faigon, A.; Redin, E.; Garcia-Inza, M.

doi:10.1016/j.radphyschem.2020.109338

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A Physics-based Numerical Model1

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Cited by 8 publications

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“…Next, we briefly describe how the model works. For more details about modeling of total dose effects in MOS oxides, the reader can refer to [19]- [21]. Radiation generates electron-hole pairs within both oxides, a fraction of which escapes from initial recombination.…”

Section: A Physics-based Numerical Modelmentioning

confidence: 99%

Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

Salomone

Garcia-Inza²,

Carbonetto³

et al. 2021

Elek.

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Mediante un modelo numérico desarrollado recientemente y basado en principios físicos, se estudia la respuesta a la radiación de celdas de compuerta flotante programadas/borradas. El rol que juega la captura de carga en los óxidos en el desplazamiento total de la tensión umbral con la dosis es debidamente evaluado a través de la variación de la tasa de captura de los huecos generados por radiación. Se considera un modelo analítico simplificado y se discuten sus limitaciones.

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Section: A Physics-based Numerical Modelmentioning

confidence: 99%