Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

Sogabe, Tomah; Ogura, Akio; Hung, Che-Lun; Evstropov, V. V.; Mintairov, M. A.; Shvarts, М. Z.; Okada, Yoshitaka

doi:10.1063/1.4858970

Cited by 32 publications

(32 citation statements)

References 11 publications

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“…49 The linear behavior of the nonexcitonic QDSC indicates that practically all the extra carriers contributed by the QDs are being collected at the cell contacts. 40,42 On the contrary, the nonadditive characteristic shown by the QD current in the excitonic QDSC suggest that all the carriers photogenerated at the QDs are recombining. Further analysis has been performed by visualizing the processes of carrier interchange between states at each QD layer.…”

Section: Carrier Escape Nature and Electric Field Effectmentioning

confidence: 96%

“…The 8e − ∕QD doping resulted in the highest V oc of 0.932 V, which can be considered a direct effect from the decreased SRH recombination due to the shift of intrinsic region. 29,40 However, the doping-induced band flattening has weakened the carrier collection due to the decreased electric field in the QD region. This negative effect was directly linked to the reduction of J sc for all doped samples.…”

Section: Doping Effect On Inas/gaas Quantum Dot Solar Cell Performancementioning

confidence: 99%

“…28 On the other hand, J 0 is the radiative or diffusion recombination dark saturation current, and its magnitude is basically related to the material properties such as bandgap (the lower the bandgap, the higher the J 0 ) and diffusion length (the shorter diffusion length, the higher the J 0 ). 37,40,41 The generation of defects is usually more enhanced for the InAs QDs-embedded GaAs because of the accumulated strain compared with the i-GaAs layer without QDs, which inevitably cause the increase of J 0SRH and the decrease of V oc .…”

Section: Introductionmentioning

confidence: 99%

“…1(a)-1(c). 39,40 For a p-i-n type QDSC under low forward bias voltage [see Fig. 1(b)], the voltage is mainly applied across the space charge region (SCR).…”

Section: Introductionmentioning

confidence: 99%

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Recent progress on quantum dot solar cells: a review

2016

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Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Carrier Escape Nature and Electric Field Effectmentioning

confidence: 96%

Section: Doping Effect On Inas/gaas Quantum Dot Solar Cell Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…1(a)-1(c). 39,40 For a p-i-n type QDSC under low forward bias voltage [see Fig. 1(b)], the voltage is mainly applied across the space charge region (SCR).…”

Section: Introductionmentioning

confidence: 99%

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Recent progress on quantum dot solar cells: a review

2016

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“…[4][5][6][7][8][9] Studies on its electrical properties have been extensively conducted using the current-voltage (J − V) characterizations and one-dimensional modeling. [10][11][12] However, to the best of our knowledge, whether or not the spatial distribution of the LC effect has a significant impact on the limiting cell conversion efficiency of a series-constrained MJSC has not been probed yet in detail. Thus, we have investigated the impact of in-plane profile of LC current generation in MJSCs, which has been found to be nonuniformly distributed, 13 to the limiting cell conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

Impact of optically nonuniform luminescence coupling effect to the limiting cell conversion efficiency in InGaP/GaAs/Ge triple junction solar cell

et al. 2017

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Abstract. The impact of nonuniform spatial distribution of the luminescence coupling (LC) effect to the limiting cell conversion efficiency of multijunction solar cells (MJSCs) has been investigated. For this purpose, the laser beam induced current distribution maps of the limiting bottom cell have been acquired experimentally under varying middle-to-bottom cell LC efficiencies. The minimum and the maximum LC efficiencies demonstrated were 8.5% and 69%, respectively. To further analyze the measurement results, a quasi-two-dimensional simulation model considering the spatially nonuniform nature of the LC effect has been developed. A good agreement between the simulation and the measurement results suggests that the nonuniform LC current distribution is induced by optical phenomena such as photon escape and internal reflection. This nonuniformity then causes the absolute conversion efficiency of the limiting cell to be reduced by 1.35% at maximum LC efficiency. This reduction, when suppressed, can yield higher limiting cell conversion efficiency, which in turn may improve the overall MJSC conversion efficiency.

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Photon Recycling in Semiconductor Thin Films and Devices

Cheng

O’Carroll

2021

Advanced Science

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Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance parameters of different types of optoelectronic devices are affected by PR are described. Finally, a summary of the roles of PR in semiconductor materials and devices and an outlook on how PR can be used to solve existing problems and challenges in the field of optoelectronics are provided. From this review, it is apparent that PR can have a positive impact on optoelectronic device performance, and that further in‐depth theoretical and experimental studies are needed to rigorously demonstrate the advantages and importance of PR.

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Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

Abstract: Published by the AIP PublishingArticles you may be interested in Luminescence based series resistance mapping of III-V multijunction solar cells

Cited by 32 publications

References 11 publications

Recent progress on quantum dot solar cells: a review

Recent progress on quantum dot solar cells: a review

Impact of optically nonuniform luminescence coupling effect to the limiting cell conversion efficiency in InGaP/GaAs/Ge triple junction solar cell

Photon Recycling in Semiconductor Thin Films and Devices

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