2020
DOI: 10.1109/ted.2020.3000983
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Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements

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Cited by 23 publications
(12 citation statements)
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“…Currently, the most matured GaN HEMTs are based on a AlGaN/GaN heterostructure [ 6 , 7 , 8 , 9 , 10 ]. More recently, Al-rich ultrathin sub-10 nm barrier heterostructures have received much attention for millimeter-wave applications [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This is because they can deliver significantly higher 2DEG sheet carrier density compared to AlGaN/GaN HEMTs while offering the possibility to highly scale the epitaxial structure as needed when using short gate lengths [ 23 , 24 , 25 ].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, the most matured GaN HEMTs are based on a AlGaN/GaN heterostructure [ 6 , 7 , 8 , 9 , 10 ]. More recently, Al-rich ultrathin sub-10 nm barrier heterostructures have received much attention for millimeter-wave applications [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This is because they can deliver significantly higher 2DEG sheet carrier density compared to AlGaN/GaN HEMTs while offering the possibility to highly scale the epitaxial structure as needed when using short gate lengths [ 23 , 24 , 25 ].…”
Section: Introductionmentioning
confidence: 99%
“…Here, we present the optimization of device dimensions of T‐gate AlN/ β ‐Ga 2 O 3 HEMT and subsequent analysis of device electrical characteristics, obtained using simulation results. It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer‐aided design (TCAD) simulations 21–26 . Although accomplishing a measurement‐based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance.…”
Section: Introductionmentioning
confidence: 99%
“…It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer-aided design (TCAD) simulations. [21][22][23][24][25][26] Although accomplishing a measurement-based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance. This is because a careful analysis of the TCAD simulations allows predicting how the device performance vary by changing the device materials and sizes without requiring time-consuming and costly experiments.…”
mentioning
confidence: 99%
“…One well-known and peculiar issue of GaN transistors is the presence of chargetrapping effects, which are responsible for the modulation of the charges available for current conduction, with a consequent degradation of the conductivity of the channel during dynamic regimes. This issue has been largely investigated in more mature RF/microwave technologies where trap-related phenomena are responsible for power amplifiers' efficiency degradation and signal distortion [15][16][17][18]. In power device technologies, these phenomena have a direct effect on the increment of the ON-resistance in dynamic regime with respect to its static (DC) value.…”
Section: Introductionmentioning
confidence: 99%