Experimental Characterization of Power Transistors for Linearity Optimization

Abib, Ghalid Idir; Bergeault, E.; Bensmida, S.; Huyart, B.

doi:10.1109/eumc.2008.4751433

Cited by 1 publication

(2 citation statements)

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“…Finally, a significant improvement in linearity can be achieved using instantaneous memoryless base-band predistortion obtained by reversing the amplitude to amplitude conversion (AM/AM) and amplitude to phase conversion (AM/PM) characteristics [11, 12]. The results concerning the load/source-pull at f 0 , the low-frequency impedances optimization, and the base-band predistortion have been presented in [13]. The new results in comparison to [13] concern the load/source-pull optimization at 2 f 0 .…”

Section: Introductionmentioning

confidence: 99%

“…The results concerning the load/source-pull at f 0 , the low-frequency impedances optimization, and the base-band predistortion have been presented in [13]. The new results in comparison to [13] concern the load/source-pull optimization at 2 f 0 . A complete description of this measurement system is presented in Section II, and experimental results obtained on an MESFET power device at 1.575 GHz biased in class-AB are reported in Section III.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Power amplifier optimization using base band and multiharmonic source/load-pull characterization with digital predistortion

Abib¹,

Bergeault

Bensmida

et al. 2009

Int. J. Microw. Wireless Technol.

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In this paper, different techniques are combined in a unique characterization system dedicated to power transistor linearity improvement. Successive optimizations are performed using source-pull/load-pull techniques at fundamental, harmonic, and base-band frequencies associated with an instantaneous memoryless base-band predistortion procedure. Measurement results performed at 1.575 GHz on a metal semiconductor field effect transistor (MESFET) power device biased in class-AB under a quadrature phase shift keying (QPSK)-modulated signal excitation show that fundamental frequency load-pull increases the output power and power-added efficiency (PAE) by 2 dB and 16 percentage points, respectively. The fundamental frequency source-pull measurements lead to an adjacent channel power ratio (ACPR) variation equal to 3 dB. For harmonic load-pull (at 2f0), it has been found that some impedances greatly improve linearity but output power and PAE decrease. Source-pull characterization at the second harmonic frequency allows one to find a trade-off between output power, efficiency, and linearity. Moreover, the influence of base-band impedance on ACPR and error vector magnitude (EVM) is found to be 15 dB and 5.5 percentage points, respectively. Finally, instantaneous memoryless base-band predistortion improves ACPR and EVM values by 5 dB and 1 point, respectively.

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