Experimental characterization of the infrared response of gold doped silicon MOSFETs (IRFETs)

Parker, William C.; Wittmer, L.; Yeargan, J. R.; Forbes, L.

doi:10.1109/iedm.1974.188794

Cited by 4 publications

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“…The use of extrinsic, or impurity doped silicon MOSFET's, has been recently proposed for the fabrication of infrared imaging and target tracking arrays. (1,2) This report describes the initial work which has been done to verify operation of this new type of device and demonstrate the design characteristics and equations by using the specific example of a gold-doped device.…”

Section: Introduction 1 Introductionmentioning

confidence: 99%

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

Forbes¹

1975

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has been observed and characterized using the gold acceptor level and gold donor level in the near infrared wavelength range from 1.0 to 3.0 microns. It will be shovrt from pulsed capacitance measurements on MOS capacitors and from measurement of the IRFET response that the characteristics of the gold impurity center in the surface space charge region correspond to the results observe| previously for the center in bulk silicon. Operation of the IRFE can then be described on the basis of a simple model where the change in charge state of the impurity cente r in the surface space charge region due to photoionization modulates the threshold voltage of the MOSFET and thus conductance of the device. The IRFET has a very high gain and responsivities of 10 milliwatts/tnicrojoule are easily achieved. Standard silicon MOSFET technology is employed and it should be possible to use other impurity centers to extend the response out to a wavelength of 14 microns. Applications in large scale integrated infrared imaging and target tracking arrays are anticipated. Unclassified SECUBITY CLASSIFICATION OF THIS PAGEflWl«! O.i» Fn'...

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Section: Introduction 1 Introductionmentioning

confidence: 99%

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

Forbes¹

1975

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The infrared sensing MOSFET

Wittmer

Parker²,

Elabd³

et al. 1975

1975 International Electron Devices Meeting

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Experimental results are presented on the operation of gold-, indium-, and gallium-doped silicon MOSFET's as infrared photon detectors (IRFET's) C11. Photoionization of these impurity centers in the surface space charge depletion region of the MOSFET causes a modulation in the threshold voltage and the conductivity of the MOSFET. Previous results on gold-doped devices [2,31 have been extended to indium-doped devices C41 and preliminary results obtained on gallium-doped devices. The IRFET exhibits large gains and responsivities of 1.0 milliamp/microwatt (10 milliwatts/microjoule) are easily achieved with indium-doped devices. It is shown that shot noise or background limited rather than l/f noise limited operation can be achieved. By the use of these three dopants, the near, middle, and far infrared wavelength regions can be covered. DEVICE OPERATIONThe silicon infrared sensing n-channel MOSFET (IRFET) shown in Fig. 1, is doped with an impurity in addition to the normal boron doping employed in the p-type substrate. The device is an integrating photon detector and is operated at low temperatures. The IRFET is reset, or first preset, by applying a large negative gate voltage to accumulate the surface and fill all impurity centers with holes. The IRFET (MOSFET) is then turned on by applying a positive gate voltage in excess of the threshold voltage, if the temperature is low then the rate of thermal emission of holes from the impurity centers can be negligible and the impurity centers will retain the trapped hole, if infrared radiation is now incident upon the device the trapped holes can be released by photoionization. In this manner the space charge in the surface depletion region of the MOSFET can be modulated.Modulation of the space charge in the surface depletion region causes a modulation in the threshold voltage of the MOSFET since the threshold or turn-on voltage depends on this space charge. AIternatively, if it is assumed the MOSFET is operated in the linear region, where the drain-tosource voltage, V D~, is much less than the excess of gate-to-source voltage above the threshold voltage, VGS-VT, then operation of the device can be viewed on the basis of a charge neutrality requirement. If the gate-to-source voltage, V G~, i a fixed, then the positive charge on the metal gate must be balanced in part by negative charge in the space charge region due to boron and other centers and the negative charge associated mobile carriers in the channel, designated surface impurity with as QCH in Fig. 1. In the case of indium-and gallium-doped devices the impurity centers are in the neutral charge state following the reset operation, photoionization by the optical emission of a hole will result in a change to the negative charge state and increase in the amount of negative space charge in the surface depletion region. This increase in negative space charge means the number of free electrons in the channel of the device must decrease and the conductivity of the device decrease.

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Experimental characterization of gold-doped infrared-sensing MOSFET's

Parker

Forbes²

1975

IEEE Trans. Electron Devices

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Experimental characterization of the infrared response of gold doped silicon MOSFETs (IRFETs)

Cited by 4 publications

References 1 publication

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

Infrared Response of Impurity Doped Silicon MOSFET's: Experimental Characterization of the Infrared Response of Gold Doped Silicon MOSFET's (IRFET's)

The infrared sensing MOSFET

Experimental characterization of gold-doped infrared-sensing MOSFET's

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