Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure

Abstract

In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well.

Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure

“…Since the indium content in the sub-surface of the In 0.17 Ga 0.83 As layer will decrease [19] , it leads to an asymmetrical well structure consisting of different indium contents of In x Ga 1−x As materials. A diagram of the In x Ga 1−x As∕GaAs well structure with indium-rich islands is illustrated in Fig.…”