Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching

He, Z.; Torky, M.; Ghandi, R.; Hitchcock, C. W.; Kennerly, S.; Chow, T. P.

doi:10.1109/ispsd59661.2024.10579670

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2024

DOI: 10.1109/ispsd59661.2024.10579670

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Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching

Z. He,

M. Torky,

R. Ghandi

et al.

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Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching

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References 5 publications

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