Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs

Abstract

Abstract-This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage.

Modulated Predictive Control for Indirect Matrix Converter

“…The best couple of adjacent switching states Ig and Id of the rectifier stage is selected in order to minimize gi as shown in (15), and then their duty cycles can be calculated using (17). From the control of the rectifier stage, the average DC-Link voltage required by the control of the inverter stage is also obtained:…”

“…Moreover, when the converter output frequency is similar to the input frequency, the IMC achieve a better losses distribution over all the switching devices than DMC. This can be achieved when IGBT devices are selected and advanced modulation schemes are implemented [16] or using a classical modulation scheme but SiC MOSFET devices on the output stage [17]. The IMC features bidirectional power flow, sinusoidal input and output currents, and controllable input power factor.…”

On Magnetic-coupled Matrix Rectifier Applied to Accelerator Power Supply

“…As a significant technique of the power supply, matrix converter and its control strategies have been studied extensively [3][4][5][6][7] . Aiming at energy feedback and power factor problem, the feasibility of applying the matrix converter to magnet power supply of heavy ion accelerator is studied in this paper.…”