1994
DOI: 10.1002/crat.2170290816
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Experimental confirmation of the peculiar behaviour of the coherent‐type twin boundaries in sphalerite crystals

Abstract: This paper presents an experimental confirmation of the peculiar behaviour of coherent twin boundaries in sphalerite crystals through a "two step" experimental procedure involving free abrasive polishing for the "developing" of the stress pattern and infrared whole-sample optical reflection ("magic mirror") for the registration. The results are in accordance with the novel static atomistic simulations of the grain boundaries.

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Cited by 6 publications
(3 citation statements)
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“…Minchev and co-workers used Makyoh to reveal differences of stress behaviour of coherent and incoherent grain-boundaries in GaSb crystals. 41 Laczik et al utilised MT to optimise the polishing technology of InP wafers. 42 More recent applications include use in optimising the grinding technology of Si wafers.…”
Section: Assessment Of Surface Quality Of Semiconductor Wafersmentioning
confidence: 99%
“…Minchev and co-workers used Makyoh to reveal differences of stress behaviour of coherent and incoherent grain-boundaries in GaSb crystals. 41 Laczik et al utilised MT to optimise the polishing technology of InP wafers. 42 More recent applications include use in optimising the grinding technology of Si wafers.…”
Section: Assessment Of Surface Quality Of Semiconductor Wafersmentioning
confidence: 99%
“…Makyoh topography has mainly been used for the assessment of wafer fabrication processes [3,4]. However, the principle of the method renders itself for the study of deformations caused by large-area extended defects; an example is the study of grain-boundary stresses in sphalerite crystals [5]. The correct interpretation of the images requires a quantitative model.…”
Section: Introductionmentioning
confidence: 99%
“…However, it has been demonstrated that the method is sensitive enough to detect the surface fingerprints of extended defects as well, such as stresses of grain boundaries in GaSb crystals [6], swirl defects in p-Si [7], bunches of dislocation slip lines [1], misfit-induced stresses [8], and surface roughening induced by ion implantation [5]. The present contribution aims at a semi-quantitative analysis of the possibilities and limitations of MT for the detection of isolated and (quasi-) periodic surface defects.…”
mentioning
confidence: 99%