Experimental demonstration of a Josephson cryogenic memory cell based on coupled Josephson junction arrays

Nair, Niketh; Jafari-Salim, Amir; D’Addario, Anthony; Imam, Neena; Braiman, Yehuda

doi:10.1088/1361-6668/ab416a

Cited by 10 publications

(3 citation statements)

References 37 publications

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“…A lot of attempts have been made to develop cryogenic memories 10 , including Josephson junctionbased memories 11 , resistance-based memories such as ReRAM 12 , FeRAM 13 , MRAM [14][15][16] , hybrid memories 17,18 , and dynamic RAM (DRAM) [19][20][21][22] . Among these, DRAM is one of the strongest candidates for high-density memory at cryogenic temperatures since its fabrication is based on mature silicon CMOS technology.…”

Section: Mainmentioning

confidence: 99%

High Storage and Energy Efficient Memory for Cryogenic Computing

Zhao,

Han,

Sun

et al. 2023

Preprint

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Efficient computing in cryogenic environments, encompassing classical von Neumann architectures, advanced quantum and neuromorphic systems, holds the potential to revolutionize big data processing. As the demand for high storage density and energy-efficient memories grows, the absence of a clear solution for cryogenic memory remains a challenge. Here, we present a cryogenic capacitorless Random Access Memory (C2RAM) utilizing advanced Si technology. This innovation is positioned to reshape cryogenic computing, with its high scalability and the capacity to be written and erased across multiple-states, significantly boosting the storage density. Notably, the C2RAM requires only ultra-low write energies, measuring just a few zeptojoules and provides exceptionally long retention times preserving data for over a decade. This positions C2RAM as a prime contender for nonvolatile memory for cryogenic von Neumann architectures and quantum technologies. In addition, the memory unit emulates biological synapses, including potentiation and depression, enabling a seamless integration into crossbar arrays, requiring no additional selectors for neuromorphic computing. The fusion of logic and analog capabilities unlocks substantial potential for high-density cryogenic memory applications. This innovative breakthrough enables the convergence of classical von Neumann, quantum, and neuromorphic computing, harnessing the significant performance advantages anticipated at cryogenic temperatures.

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Section: Mainmentioning

confidence: 99%

High Storage and Energy Efficient Memory for Cryogenic Computing

Zhao,

Han,

Sun

et al. 2023

Preprint

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“…One reason for a large LUT circuit area is the large memory cell circuit area. Because the typical cell size of the SFQ memory is several tens µm square [16], [17], [18], [19], [20], the memory cell array occupies a large portion of the LUT circuit area. The other reason is that a complicated and dense wiring is needed to reconfigure the internal states of the memory cell array in the LUT for inputting SFQ signals to the memory cell.…”

Section: Introductionmentioning

confidence: 99%

Compact Superconducting Lookup Table Composed of Two-Dimensional Memory Cell Array Reconfigured by External DC Control Currents

Hosoya

Yamanashi

Yoshikawa

2021

IEEE Trans. Appl. Supercond.

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“…Note, the cryogenic memory block is a crucial component of quantum computing systems based on superconducting qubits 38 . Our proposed QAHE-based memory device offers at least a million times reduction in the cell area and 1000 times reduction in the cell read/write power compared with the state-of-the-art cryogenic memory devices [39][40][41][42][43][44][45][46] (see supplementary Table S1 for detailed comparison). Our proposed memory device is a potential gamechanger for scalable quantum computing systems 38 and space cryogenics 47 . )…”

mentioning

confidence: 99%

A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Alam

Hossain

Aziz

2021

Sci Rep

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The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipation-less and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moiré graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design provides a pathway towards realizing topologically protected memory devices.

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Experimental demonstration of a Josephson cryogenic memory cell based on coupled Josephson junction arrays

Cited by 10 publications

References 37 publications

High Storage and Energy Efficient Memory for Cryogenic Computing

High Storage and Energy Efficient Memory for Cryogenic Computing

Compact Superconducting Lookup Table Composed of Two-Dimensional Memory Cell Array Reconfigured by External DC Control Currents

A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

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