Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Shi, Kewen; Cai, Wenlong; Zhuo, Yudong; Zhu, Daoqian; Huang, Yan; Yin, Jialiang; Cao, Kaihua; Wang, Zhaohao; Guo, Zongxia; Wang, Zilu; Wang, Gefei; Zhao, Weisheng

doi:10.1109/led.2021.3058697

Cited by 24 publications

(5 citation statements)

References 21 publications

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“…Finally, the generation of out-of-plane spin polarization due to STT [116,125,149], additional ferromagnetic layer [48], lateral modulation of the Rashba effect [150], or lowsymmetry crystal structure [59,60,151,152] has been demonstrated, which can lead to field-free switching in combination with the conventional DLT. These approaches differ in their strengths and limitations in relation to technological challenges such as scalability, cost of material and additional lithography steps, reliability, robustness against disturbance, compatibility with CMOS processes, as well as the preservation of large TMR and data retention.…”

Section: Field-free Switching In Perpendicularly Magnetized Systemsmentioning

confidence: 99%

“…Switching of an MTJ by a combination of SOT and STT biases was initially proposed to lower the critical writing current and energy of the STT-MTJ [215,216]. By incorporating a strong-SOC material into the STT cell, it is possible to use the 2-terminal geometry suitable for footprint reduction [116], as well as to lift the requirement of an external magnetic field [122,125,149,154,211]. In this case, however, STT serves as the main switching mechanism, whereas the SOT supplies the in-plane spin polarization to assist the reversal.…”

Section: Sot-stt Switchingmentioning

confidence: 99%

“…Pitch scaling, targeting a separation <100 nm of MTJs with diameter ~30 nm, and the fabrication of multi-pillar devices on the same SOT track [Fig. 10(d)] [118,149,229] will however increase shadowing and likely impact yield by increasing the short failure rate induced by sidewall metallic re-deposition during etching, calling for optimized SOT-MTJ etch module development.…”

Section: Sot-mtj Integration and Challengesmentioning

confidence: 99%

See 2 more Smart Citations

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

Křižáková

Perumkunnil

Couet

et al. 2022

Journal of Magnetism and Magnetic Materials

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Section: Field-free Switching In Perpendicularly Magnetized Systemsmentioning

confidence: 99%

Section: Sot-stt Switchingmentioning

confidence: 99%

Section: Sot-mtj Integration and Challengesmentioning

confidence: 99%

See 1 more Smart Citation

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

Křižáková

Perumkunnil

Couet

et al. 2022

Journal of Magnetism and Magnetic Materials

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“…However, compared with STT-MRAM, the main disadvantage of SOT-MRAM is that it requires two access transistors per bit-cell, resulting in larger layout area. Various solutions are proposed that allow multiple SOT-MTJ devices to share a single spin orbital moment electrode layer, thus reducing the chip area overhead [30]. SOT-MRAM can also replace SRAM and STT-MRAM as graphics processing unit (GPU) register with higher energy efficiency [31].…”

Section: Spintronics and Related Devicesmentioning

confidence: 99%

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

Yuan,

Jiang

2024

Semicond. Sci. Technol.

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Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research results, the physical mechanism of magnetic/non-magnetic heterojunction interface coupling is discussed. The influence of the interface effect of the heterojunction on the performance of MTJ devices is studied, and the optimization method is proposed specifically. This work systematically summarizes the interface effect of magnetic/non-magnetic heterojunction.

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“…However, the switching speed and energy consumption of STT-MRAM are limited by the intrinsic incubation delay, while SOT-MRAM exhibits a poor integration density because it contains two transistors in a standard bit cell [18]. In [19,20], an emerging spintronics-based magnetic memory, NAND-like spintronics memory (NAND-SPIN), was designed to overcome the shortcomings of STT-MRAM and SOT-MRAM and pave a new way to build a novel memory and PIM architecture.…”

Section: Introductionmentioning

confidence: 99%

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

Zhao,

Yang,

et al. 2022

Preprint

Self Cite

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The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing power wall and memory wall problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve ∼2.6× speedup and ∼1.4× improvement in energy efficiency over state-of-the-art PIM solutions.

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Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Cited by 24 publications

References 21 publications

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

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