2023
DOI: 10.1145/3546193
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Experimental Demonstration of STT-MRAM-based Nonvolatile Instantly On/Off System for IoT Applications: Case Studies

Abstract: Energy consumption has been a big challenge for electronic devices, particularly, for the battery-powered Internet of Things (IoT) equipment. To address such a challenge, on one hand, low-power electronic design methodologies and novel power management techniques have been proposed, such as nonvolatile memories and instantly on/off systems; on the other hand, the energy harvesting technology by collecting signals from human activity or the environment has attracted widespread attention in the IoT area. However… Show more

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Cited by 5 publications
(4 citation statements)
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“…Importantly, they have shared specific timing and power details, offering valuable insights for further research. Work in [18] examines the effects of commercially available STT-MRAM and DRAM on energy harvesting in IoT systems. The study evaluates different scenarios and finds that using STT-MRAM results in a 15% decrease in power consumption and a 714x faster data restoration time.…”
Section: Related Workmentioning
confidence: 99%
“…Importantly, they have shared specific timing and power details, offering valuable insights for further research. Work in [18] examines the effects of commercially available STT-MRAM and DRAM on energy harvesting in IoT systems. The study evaluates different scenarios and finds that using STT-MRAM results in a 15% decrease in power consumption and a 714x faster data restoration time.…”
Section: Related Workmentioning
confidence: 99%
“…3,4) Nonvolatile (NV) logic, where internal data are stored in NV-devices is a fundamental solution for this issue. [5][6][7][8][9] Because all the data can be retained in NV-devices without power supply, the use of NV-logic has high potential for realizing the ultra-low-power edge-IoT device by temporarily shutting down the power supply of the unused modules. An NV-register which is composed of several NV flip-flops (NV-FFs) [10][11][12][13][14] is a key component of the NV-logic LSI as it stores various temporal data into NV devices before power down.…”
Section: Introductionmentioning
confidence: 99%
“…Spin-transfer torque magnetic random-access memory (STT-MRAM) has garnered significant interest as an excellent prospect for on-chip cache memory applications, owing to its advantageous attributes, such as high integration density, low leakage power consumption, inherent nonvolatility, and compatibility with the complementary metaloxide-semiconductor (CMOS) fabrication process [1][2][3][4][5][6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%