Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure

Lu, Linlin; Cao, Baoli; Zhang, Libo; Song, Tao; Li, Lianyan; Li, Simin; Shi, Yuechun; Chen, Xiangfei

doi:10.1007/s11431-014-5659-1

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…Recently, the reconstruction equivalent chirp (REC) technique has been proposed to fabricate DFB lasers and multi-wavelength DFB laser arrays with low cost and high wavelength accuracy [13][14][15][16][17][18]. The advantage of the REC technique is that it is much easier to fabricate DFB semiconductor lasers with various complex constructures, and it is completely compatible with the current mature lm-scale photolithography, and the fabrication cost is low [19].…”

Section: Introductionmentioning

confidence: 99%

Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers

et al. 2015

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“…Reconstruction equivalent chirp (REC) technique based on sampled grating has been proposed and widely studied to reduce the fabrication cost and improve the laser performances [12][13][14][15][16][17][18][19][20]. As reported in [18], 60-channel DFB laser arrays with high wavelength accuracy and high single-longitudinalmode (SLM) operation was successfully demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Transient mode competition in directly modulated DFB semiconductor laser

Xiao

Shi

Zheng

et al. 2015

Sci. China Phys. Mech. Astron.

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A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between 1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent  phase shift (-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the 1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the 1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. DFB semiconductor laser, mode competition, relaxation oscillation, sampled grating PACS number(s): 42.55.Px, 42.60.Mi, 42.60.Rn Citation: Xiao R L, Shi Y C, Zheng J L, et al. Transient mode competition in directly modulated DFB semiconductor laser.

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“…However, modal instabilities have often been observed because of the spatial-hole-burning (SHB) effect at high injection current [2], [3], which degrades the performance of the lasers. To suppress the SHB effect, a variety of complicated grating structures have been proposed, such as corrugation-pitch-modulated (CPM) DFB lasers [4], distributed coupling coefficients (DCC) DFB lasers [5], multiple-phase-shift (MPS) DFB lasers [6], [7], and so on. Recently, multiple-CPM (MCPM) grating DFB lasers, which contain three CPM sections located along the longitudinal cavity, have been proposed and numerically investigated to further improve SLM performance [8].…”

Section: Introductionmentioning

confidence: 99%

Experimental Demonstration of a Multicorrugation-Pitch-Modulated (MCPM) DFB Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology

et al. 2015

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A multicorrugation-pitch-modulated (MCPM) distributed-feedback semiconductor laser is experimentally demonstrated for the first time to achieve stable single longitudinal mode (SLM) performance. The MCPM structure was equivalently realized based on a sampled grating using reconstruction equivalent chirp (REC) technology. The proposed REC-MCPM structure can effectively flatten the optical intensity distribution along the laser cavity, leading to the strong suppression in spatial hole burning. In addition, the REC-MCPM grating structures can be readily fabricated using conventional holographic lithography combined with low-cost standard micrometer-level photolithography. A proofof-principle study both in a simulation and an experiment is presented in this paper. The fabricated 400-m-long REC-MCPM semiconductor laser shows very good SLM performance with SMSRs being more than 42 dB under test conditions of a large injection current range (up to 300 mA) and different ambient temperatures.

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Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure

Cited by 3 publications

References 15 publications

Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers

Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers

Transient mode competition in directly modulated DFB semiconductor laser

Experimental Demonstration of a Multicorrugation-Pitch-Modulated (MCPM) DFB Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology

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