1999
DOI: 10.1107/s0108767399009782
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Experimental determination of electric-field-induced differences in structure-factor phases of the order of 2%

Abstract: In order to understand the induced electron-density response of covalently bonded materials to an externally applied electric field, the change of structure-factor phases of several weak reflections of GaAs has been measured by three-beam interferences. Using a modulation technique, phase variations of the order of 1 degrees for a field strength of 1 kV mm(-1) were determined. Although the statistics of these first experiments are rather poor, the experiment verifies qualitatively the predictions of a semi-emp… Show more

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Cited by 28 publications
(1 citation statement)
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“…The sample was a crystal of GaAs oriented to the (222) reflection. This reflection is very weak [63][64][65] because its structure factor is given by the difference of the atom form factors for Ga and As, which, far from absorption edges, corresponds to two electrons. The photon energy used for the experiment was 11.8655 keV, which is a few eV below the As K absorption edge.…”
Section: A Test Experimentsmentioning
confidence: 98%
“…The sample was a crystal of GaAs oriented to the (222) reflection. This reflection is very weak [63][64][65] because its structure factor is given by the difference of the atom form factors for Ga and As, which, far from absorption edges, corresponds to two electrons. The photon energy used for the experiment was 11.8655 keV, which is a few eV below the As K absorption edge.…”
Section: A Test Experimentsmentioning
confidence: 98%