Experimental Determination of Mechanical Properties of the Anode Cell of an X-Ray Lithograph

Djuzhev, N. A.; Gusev, E. E.; Dedkova, A. A.; Tovarnov, D. A.; Makhiboroda, M. A.

doi:10.1134/s1063784220110055

Cited by 5 publications

(8 citation statements)

References 21 publications

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“…Membranes behavior under overpressure, supplied from the side of the holes in silicon, was studied. The bench on a base of optical profilometer [2,31,32], performing the uniform supply and fixation of pressure value, as well as defining deflection of the membrane, was used for testing. Deflection means a small difference in height between membrane area and substrate area (membrane base), observed in the membrane center.…”

Section: Membranes Calculation and Testing Techniques Defined Parametersmentioning

confidence: 99%

“…2), can contain microcracks, etc. Membrane destruction is often performed along its perimeter in the fixing area, the highest mechanical voltage is often observed along the membrane perimeter in the fixing area [2,33,39]. Therefore, the strengthening of the membranes fixing area by means of console reinforcements (supports) use is used as the method of these membranes reinforcement.…”

Section: Membrane Fixing Conditions Influencementioning

confidence: 99%

“…Diameter of the formed hole is several orders higher than membrane thickness. Membranes, made this way, are used, particularly in X-ray optics [1,2] and as sensing elements of sensors of various physical quantities [3][4][5], etc.…”

Section: Introductionmentioning

confidence: 99%

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Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

et al. 2022

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The features of thin-film membranes, which are formed above round holes in silicon substrates using the Bosch-process are considered. The membrane has a complex shape due to the presence of the stress state of the initial films. The analysis of the dependence of the membrane deflection w on the supplied overpressure P is used to calculate the mechanical characteristics of the membranes. In this case, it is necessary to determine directly on the membrane its diameter, the thickness of the constituent layers, the change in the topography of the membrane surface over its entire area as the overpressure increases. Determination of the membrane diameter and the thicknesses of the constituent layers is shown by the example of p-Si*/SiNx/SiO2 and SiNx/SiO2/SiNx/SiO2 membranes. We used spectral ellipsometry, energy-dispersive X-ray spectroscopy, optical profilometry, optical microscopy. The influence of the peculiarities of the fixing conditions on the stress-strain state of membranes is shown, and the assessment is carried out by means of numerical modeling. A technique has been developed for measuring and calculating the mechanical characteristics of membranes that have an initial deflection. The calculation result is shown on the example of a membrane with an initial deflection of 2 μm --- SiNx/SiO2/SiNx/SiO2 and a membrane with an initial deflection of 30 μm --- Al/SiO2/Al. Keywords: stress, bulging method, films, thin-layer coating, film thickness, membrane, pressure blister test, residual stress, microelectromechanical systems, MEMS, silicon substrate, large deformations, strain, deflections, circular membrane, bulge testing.

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Section: Membranes Calculation and Testing Techniques Defined Parametersmentioning

confidence: 99%

Section: Membrane Fixing Conditions Influencementioning

confidence: 99%

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Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

et al. 2022

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“…To demonstrate the analysis of MEMS structures, thinfilm membranes formed by the Bosch process [32][33][34] were studied (Figs. 3−6).…”

Section: Samplesmentioning

confidence: 99%

“…The method consists in fixing the edges of the membrane along the perimeter, applying (one-sided) overpressure to it from one side, analyzing the dependence of the deflection of the membrane on the value of the applied overpressure, calculating the elastic modulus or other values [35][36][37][38][39]. Since the membranes formed by the Bosch process differ in the presence of an initial deflection and a complex shape even before the overpressure is applied, the study of their stress-strain state requires detailed consideration [32,33].…”

Section: Samplesmentioning

confidence: 99%

Technique for investigation of the shape changes of wafers and thin-film membranes by using geomorphometric approaches

2022

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We discuss a technique for investigating changes in complex topography and shape of structures using geomorphometric methods to study surfaces of wafers and membranes formed by the Bosch process. The wafers were analyzed before and after the deposition of the SiO2 layer. The membranes were analyzed during the bulge testing. The study was carried out using maps of the catchment area and principal curvatures taking into account artifacts of the approximation of experimental data. We found a correspondence between the distribution of lines connecting the highest surface areas before and after the deposition of the SiO2 layer on the wafers. For membranes with structure: Al(0.8 μm)/SiO2(0.6 μm)/Al(1.1 μm), pSi*(0.8 μm)/SiNx(0.13 μm)/SiO2, Al(0.6 μm) we also found that features of membrane boundaries are mainly caused by their initial shape rather than change under the action of an applied pressure. The advantages of geomorphometric methods for studying changes in the shape of wafers and thin-film membranes in technological processes for the manufacturing of microelectronic devices are shown in comparison with traditional methods for analyzing surface topography maps. Keywords: thin films, membrane, defect, mechanical characteristics, mechanical stresses, deformation, deflection, strain, microelectromechanical systems, MEMS, circular membrane, silicon substrate, optical profilometry, overpressure, geomorphometry, Gaussian curvature, warpage, principal curvatures, wafer, bulge testing, bulging method, thin-layer coating, digital elevation models, DEM, surface, topography.

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Overview of methods for measuring the mechanical strength of thin films

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Tovarnov

Dyuzhev

et al. 2022

Modeling of Systems and Processes

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This review article discusses methods for measuring the main mechanical properties of thin films: tensile testing, indentation, evaluation of the mechanical strength margin for the curvature of the plate-thin film system, bulge method and research using a deformed and resonant cantilever. In the process of critical analysis of domestic and foreign literary sources, the advantages and disadvantages of the methods were revealed; the authors' motivation for conducting such studies was explained. In addition to the existing widely used methods, an original and relatively new technique is given - the use of electric current as a controlled means of applying thermo mechanical stresses to electrical conductors to characterize their fatigue behavior. Approaches for increasing the mechanical strength of thin films are also indicated.

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Experimental Determination of Mechanical Properties of the Anode Cell of an X-Ray Lithograph

Cited by 5 publications

References 21 publications

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

Technique for investigation of the shape changes of wafers and thin-film membranes by using geomorphometric approaches

Overview of methods for measuring the mechanical strength of thin films

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