Experimental determination of the Fermi surface of thin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sc</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Er</mml:mi></mml:m

Bogaerts, Ria; Herlach, F.; Keyser, A. De; Peeters, F. M.; DeRosa, F.; Palmstrøm, C. J.; Brehmer, D.; Allen, S. J.

doi:10.1103/physrevb.53.15951

Cited by 11 publications

(13 citation statements)

References 22 publications

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“…As mentioned above, a conventional LDA approach treating the 4f shell as core states severely overestimates the p-d overlap, and hence the carrier concentration and the size of the FS pockets. Both the LDA+DMFT and LDA+U [12]. b Chantis et al [27] treatment of the 4f states lead to a drastic reduction in the magnitude of the carrier density and SdH frequencies (Table I), and hence to a much better agreement with experiments.…”

Section: Pacs Numbersmentioning

confidence: 91%

“…Indeed, when the 4f states are treated as core electrons, calculations based on the local-density approximation (LDA) do yield a semi-metal, but do not otherwise provide an accurate description of the electronic properties. The volume of the calculated FS pockets is approximately three times too large, leading to incorrect carrier concentrations and SdH frequencies [7,8] compared with accurate measurements [9,10,11,12].…”

Section: Pacs Numbersmentioning

confidence: 99%

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Role of Atomic Multiplets in the Electronic Structure of Rare-Earth Semiconductors and Semimetals

et al. 2009

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We present a study of the effects of strong correlations in rare-earth pnictides, in which localized 4f states simultaneously retain atomiclike character and strongly influence the free-electron-like valence electron states. Using erbium arsenide as our example, we use a modern implementation of dynamical mean-field theory to obtain the atomic multiplet structure of the Er3+ 4f shell, as well as its unusually strong coupling to the electronic Fermi surfaces; these types of behavior are not correctly described within conventional electronic-structure methods. We are then able to explain the long-standing theoretical question of the quasisaturation of magnetization in an applied magnetic field, and to obtain the first quantitative agreement with experimental Shubnikov-de Haas frequencies of the Fermi-surface sheets.

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Section: Pacs Numbersmentioning

confidence: 91%

Section: Pacs Numbersmentioning

confidence: 99%

Role of Atomic Multiplets in the Electronic Structure of Rare-Earth Semiconductors and Semimetals

et al. 2009

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“…1 and 2 is shown in Fig. Since the electronic structure of ErSb is similar [46][47][48] to that of ErAs, the input parameters for ErSb should be comparable. The PL enhancement resembles Fig.…”

Section: Theorymentioning

confidence: 99%

Estimate of the plasmonic enhancement for the erbium arsenide (metallic nanoparticle): indium arsenide (quantum dot) system

Szmulowicz

Eyink

2015

J. Nanophoton

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The epitaxially grown system comprising semimetallic ErAs (erbium arsenide) nanoparticles (MNP) and InAs (indium arsenide) single quantum dots (QDs) hold great promise for plasmonic applications. The distinguishing feature of the ErAs-InAs hybrid is that the hybrid separation can be varied and accurately controlled in the molecular-beam epitaxial growth. In order to assess the potential of this system for plasmonic applications, this paper aims to estimate and optimize the expected magnitude of the plasmonic enhancement. We use the Sun-Khurghin theory to estimate the expected absorption and photoluminescence (PL) enhancement. Using a carefully selected set of materials' parameters as input, we predict about 500-fold plasmonic PL enhancement for this system under resonant conditions.

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“…24 The effective masses of ErAs with the similar band structure obtained by the same calculation agree well with the experimental values. 25 Therefore, the calculated masses can be used for the calculation of sublevel energies. The experimental value of the band overlap is not known, but the band calculation provides a band-overlap value of Ϫ1.24 eV , for ErP.…”

Section: Prb 59mentioning

confidence: 99%

Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects

et al. 1999

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Thickness-dependent changes in the electronic states of semimetal ErP islands grown on the InP͑001͒ surface by organometallic vapor-phase epitaxy have been investigated by means of scanning tunneling microscopy/spectroscopy. The normalized differential conductance spectra show a semimetal behavior for the ErP islands ͑20-50 nm in size͒ with thickness larger than 3.4 nm, while the spectra taken for the islands thinner than 3.4 nm reveal a semiconducting gap varying to ϳ1 eV. The thickness dependence of the observed gap is explained by the energy gap between the electron sublevel and the hole sublevel calculated using a one-dimensional square-well potential model with infinite barriers. The results demonstrate a semimetal to semiconductor transition due to the quantum size effect on the semimetal ErP band structure with a band overlap of Ϫ0.3 eV.

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Experimental determination of the Fermi surface of thinSc1−xEr

Cited by 11 publications

References 22 publications

Role of Atomic Multiplets in the Electronic Structure of Rare-Earth Semiconductors and Semimetals

Role of Atomic Multiplets in the Electronic Structure of Rare-Earth Semiconductors and Semimetals

Estimate of the plasmonic enhancement for the erbium arsenide (metallic nanoparticle): indium arsenide (quantum dot) system

Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects

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