Experimental Determination of the Temperature Dependency of the Elastic Constants of Degenerately Doped Silicon

Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas; Dekker, J.; Pekko, Panu

doi:10.1109/eftf-ifc.2013.6702116

Cited by 3 publications

(3 citation statements)

References 10 publications

(18 reference statements)

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“…A very promising approach based on heavy doping has resulted in the demonstration of ±0.05 ppm/°C variation between 20°C and 100°C in a thermally activated silicon resonator [45]. Recently the first-and second-order TCF were measured as a function of the doping level in silicon doped by phosphorous, arsenic and boron and parameters for nulling the first order TCF were obtained [46]. Another method to control silicon's TCF is to combine the silicon with a material that's TCF is of opposite sign, such as silicon dioxide.…”

Section: Siliconmentioning

confidence: 99%

Mechanical properties of MEMS materials: reliability investigations by mechanical- and HRXRD-characterization related to environmental testing

2014

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The performance and aging of MEMS often rely on the stability of the mechanical properties over time and under harsh conditions. An overview is given on methods to investigate small variations of the mechanical properties of structural MEMS materials by functional characterization, high-resolution x-ray diffraction methods (HR-XRD) and environmental testing. The measurement of the dynamical properties of micro-resonators is a powerful method for the investigation of elasticity variations in structures relevant to microtechnology. X-ray diffraction techniques are used to analyze residual strains and deformations with high accuracy and in a non-destructive manner at surfaces and in buried micro-structures. The influence of elevated temperatures and radiation damage on the performance of resonant microstructures with a focus on quartz and single crystal silicon is discussed and illustrated with examples including work done in our laboratories at CSEM and EPFL.

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Section: Siliconmentioning

confidence: 99%

Mechanical properties of MEMS materials: reliability investigations by mechanical- and HRXRD-characterization related to environmental testing

2014

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“…Further, Refs. [99,107,108] fabricated a series of resonators with different doping concentrations, orientations, and resonance types, respectively. The elastic constants of the doped silicon resonator with temperature dependence were extracted by testing.…”

Section: Passive Compensationmentioning

confidence: 99%

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Feng

Yuan

et al. 2022

Micromachines

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In this paper, the basic concepts of the equivalent model, vibration modes, and conduction mechanisms of MEMS resonators are described. By reviewing the existing representative results, the performance parameters and key technologies, such as quality factor, frequency accuracy, and temperature stability of MEMS resonators, are summarized. Finally, the development status, existing challenges and future trend of MEMS resonators are summarized. As a typical research field of vibration engineering, MEMS resonators have shown great potential to replace quartz resonators in timing, frequency, and resonant sensor applications. However, because of the limitations of practical applications, there are still many aspects of the MEMS resonators that could be improved. This paper aims to provide scientific and technical support for the improvement of MEMS resonators in timing, frequency, and resonant sensor applications.

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“…Resonator wafer process was similar to that discussed in [5], [6]. Device wafers were vacuum encapsulated on wafer level using anodic bonding with a glass/silicon cap wafer [7].…”

Section: A Resonator Fabrication and Encapsulationmentioning

confidence: 99%

Long term stability and quality factors of degenerately n-type doped silicon resonators

Jaakkola

Gorelick

Prunnila

et al. 2014

2014 IEEE International Frequency Control Symposium (FCS)

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Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1 × 10 19 cm −3 . Quality factors of~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 × 10 19 cm −3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.

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Experimental Determination of the Temperature Dependency of the Elastic Constants of Degenerately Doped Silicon

Cited by 3 publications

References 10 publications

Mechanical properties of MEMS materials: reliability investigations by mechanical- and HRXRD-characterization related to environmental testing

Mechanical properties of MEMS materials: reliability investigations by mechanical- and HRXRD-characterization related to environmental testing

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Long term stability and quality factors of degenerately n-type doped silicon resonators

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