Experimental electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Be</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:math>

Tzeng, C.-T.; Tsuei, Ku Ding; Lo, W.-S.

doi:10.1103/physrevb.58.6837

Cited by 23 publications

(22 citation statements)

References 16 publications

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“…The concentration-dependent diffusion coefficient of Be in graphite and the influence of oxygen at the interface is studied in a combined XPS and RBS depth profile analysis [17]. Although earlier work is available on the C-Be interaction [18][19][20][21][22][23][24], the system was studied for the first time without any additionally present contaminations, in particular BeO (in some cases even exceeding the amount of measured beryllium carbide in earlier work).…”

Section: Surface Reaction Experimentsmentioning

confidence: 99%

Surface chemistry of first wall materials – From fundamental data to modeling

Linsmeier¹,

Reinelt²,

Schmid³

2011

Journal of Nuclear Materials

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The application of different materials at the first wall of fusion devices, like beryllium, carbon, and tungsten in the case of ITER, unavoidably leads to the formation of compounds. These compounds are created dynamically during operation and depend on the local parameters like surface temperature, incoming particle energies and species. In dedicated, well-defined laboratory experiments, using mainly X-ray photoelectron spectroscopy and Rutherford backscattering analysis for qualitative and quantitative chemical surface analysis, the parameter space in relevant element combinations are investigated. These studies lead to a deep understanding of the reaction mechanisms under the applied conditions and to a quantitative description of reaction and diffusion processes. These data can be parameterized and integrated into a modeling approach which combines dynamic surface chemistry with the modeling of the transport in the plasma. Two different approaches for surface reaction modeling are compared and benchmarked with experimental data.

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Section: Surface Reaction Experimentsmentioning

confidence: 99%

Surface chemistry of first wall materials – From fundamental data to modeling

Linsmeier¹,

Reinelt²,

Schmid³

2011

Journal of Nuclear Materials

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“…414,426,427 For Be 2 C, only a few basic theoretical and experimental investigations of the band structure have been reported. 422,428 This may be primarily due to the reported difficulty in synthesizing Be 2 C, 429 and the propensity for Be 2 C to hydrolyze in ambient conditions to Be(OH) 2 . 422 The latter would clearly limit the utility of Be 2 C as a moisture DB.…”

mentioning

confidence: 99%

“…422,428 This may be primarily due to the reported difficulty in synthesizing Be 2 C, 429 and the propensity for Be 2 C to hydrolyze in ambient conditions to Be(OH) 2 . 422 The latter would clearly limit the utility of Be 2 C as a moisture DB.…”

mentioning

confidence: 99%

“…414,422 Early interest in beryllium nitride and carbide compounds was primarily for nuclear applications, 421,423 with a few recent investigations focused on Be 3 N 2 and Be 2 C compounds as super hard semiconducting materials. 422,424 For Be 3 N 2 , theoretical investigations of the electronic structure for Be 3 N 2 do indicate a relatively dense atomic structure. 425 Experimental investigations of laser ablated and sputter deposited a-BeN thin films have reported relatively high optical dielectric constants ranging from ∼ 4 to 5.7 and wide band gaps of 3.8 -4.2 eV.…”

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confidence: 99%

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Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…Its large elastic constants, in turn, are related to hardness, high sound velocities, and good thermal conductivity. 5 This large band gap material might lead to interesting optical properties and other technological applications. 6,7 Be 2 C has the same fcc lattice and also the same number of valence electrons as the group-IV elemental semiconductors, and has thus attracted much theoretical investigation.…”

Section: Introductionmentioning

confidence: 99%

Growth of Be2C(100) films on Be(0001) substrate using C60 as precursor

Tzeng¹,

Yuh

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Highly oriented crystalline beryllium carbide films were grown on Be͑0001͒ substrate using C 60 as a carbon source. The films were characterized by low energy electron diffraction, photoemission spectroscopy, and near-edge x-ray absorption fine structure. C 60 begins to decompose on Be͑0001͒ at about 250°C, forming beryllium carbide completely after further annealing to 450°C. The beryllium carbide film is observed as sets of ͑100͒ surfaces, arranged in three domains rotated by 120°from each other. Extra C 60 deposited on Be 2 C(100)/Be(0001) at temperature below 200°C and heated to 450°C leads to an increase of the film thickness, indicating the decomposition of C 60 on Be 2 C(100)/Be(0001) at an elevated temperature and formation of new carbide layers on the sample surface. It further implies that the Be 2 C/Be surface has the ability to supply Be atoms to interact with the new carbon atoms on top, and that Be atoms can diffuse through the beryllium carbide layer at the temperature of 450°C, possibly involving a vacancy mechanism.

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Experimental electronic structure ofBe2C

Cited by 23 publications

References 16 publications

Surface chemistry of first wall materials – From fundamental data to modeling

Surface chemistry of first wall materials – From fundamental data to modeling

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Growth of Be2C(100) films on Be(0001) substrate using C60 as precursor

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