Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

Pastor, A. A.; Serdobintsev, P. Yu.; Chaldyshev, V. V.

doi:10.1134/s106378261205017x

Cited by 10 publications

(9 citation statements)

References 15 publications

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“…When defects are mostly eliminated the important role of the buffer is limitation of electronic transport from the InAs QDs to the continuum of states in LT‐GaAs. These states are known to have a broad energy distribution and ultrashort relaxation time in the range of hundreds of fs . Our analysis shows that the set of related phenomena can be consistently described in terms of the quantum‐mechanical model with geometrical parameters taken from TEM.…”

Section: Discussionmentioning

confidence: 73%

“…The important difference of BP2251 from the reference sample is proximity of the LT‐GaAs layer. The latter is known to have a very short lifetime of non‐equilibrium carriers due to a very high density of the excess‐arsenic‐related point defects . It should be noted that the low‐temperature overgrowth does not make any noticeable changes in the atomic structure of the underlying GaAs buffer and QDs grown at much higher temperature.…”

Section: Discussionmentioning

confidence: 99%

“…These states are known to have a broad energy distribution and ultrashort relaxation time in the range of hundreds of fs. [7][8][9] Our analysis shows that the set of related phenomena can be consistently described in terms of the quantum-mechanical model with geometrical parameters taken from TEM. Due to exponential dependence of the probability of tunneling on both height and width of the barrier, it becomes possible to change the efficiency of optical emission from the InAs QDs by two orders of magnitude.…”

Section: Discussionmentioning

confidence: 99%

“…While MBE‐grown In(Ga)As QDs buried in GaAs can exhibit a long‐term storage of excitons and spins, the MBE also provides a GaAs‐based materials with very fast switching capability due to extremely short lifetime of non‐equilibrium charge carriers . For that the GaAs‐based structure should be grown by MBE at low temperature (LT).…”

Section: Introductionmentioning

confidence: 99%

“…While MBE-grown In(Ga)As QDs buried in GaAs can exhibit a long-term storage of excitons and spins, the MBE also provides a GaAs-based materials with very fast switching capability due to extremely short lifetime of non-equilibrium charge carriers. [7][8][9] For that the GaAs-based structure should be grown by MBE at low temperature (LT). In this case a large amount of excess arsenic is incorporated into the growing film in the form of antisite defects As Ga , which can be transformed into a system of self-organized nanoinclusions by post-growth annealing.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Kosarev

Берт

Неведомский

et al. 2019

Physica Status Solidi (b)

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Optical and structural study of a system of InAs quantum dots (QDs) buried under low‐temperature (LT) grown GaAs layers with different buffer layers in between has been performed. It has been shown that the buffer is very important for both atomic structure and electronic processes. The direct overgrowth at low temperature causes the formation of misfit dislocation and related drop of the photoluminescence (PL) intensity from the InAs QDs. The defect formation is eliminated by using either 5 nm thick GaAs or combined AlAs/GaAs buffer. Strong changes in the QD‐related PL intensity and line shape are experimentally revealed in the case of thin GaAs buffer. These changes are quantitatively described in terms of electron tunneling from the InAs QDs through the GaAs barrier to the continuum of states in the LT‐GaAs. When a 2.5 nm thick portion of the GaAs buffer is substituted by AlAs, the barrier becomes nontransparent for the electron tunneling from the ground states in the InAs QDs. As a result, the QD‐related PL becomes much stronger and the line shape becomes similar to that from the reference sample in the photon energy range of ground state transitions.

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Section: Discussionmentioning

confidence: 73%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Kosarev

Берт

Неведомский

et al. 2019

Physica Status Solidi (b)

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A Study of Emission Power and Spectrum of LT-GaAs Based THz Photoconductive Antennas

et al. 2015

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Direct visualization of the photovoltaic effect in a single-junction GaAs cell via in situ electron holography

Anada

Hirayama

Sasaki

et al. 2020

Journal of Applied Physics

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The nanoscale electric potential distribution in a gallium arsenide single p–n junction cell under artificial illumination, or the photovoltaic (PV) effect, was investigated using in situ electron holography with a transmission electron microscope. A custom-made specimen holder with biasing and illumination capabilities was used for this purpose. To determine the practical potential of the specimen prepared by a focused ion beam (FIB), the thickness of active layers that directly contribute to the PV effect was accurately derived by analyzing the results of in situ biasing electron holography. In situ light-illumination electron holography directly visualized the PV effect in the cell, where the potential difference between the p and n regions decreased with the increase in the intensity of light illumination. Using PV simulations, in conjunction with some reasonable assumptions regarding the practical specimen parameters in the FIB-milled specimen, we can generate a credible explanation of the experimental result. These findings will help to fully understand the PV effect in various types of solar cells, including perovskite and quantum dot cells.

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Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

Cited by 10 publications

References 15 publications

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

A Study of Emission Power and Spectrum of LT-GaAs Based THz Photoconductive Antennas

Direct visualization of the photovoltaic effect in a single-junction GaAs cell via in situ electron holography

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