Experimental evaluation of the impact of EUV pellicles on reticle imaging

Mochi, Iacopo; Timmermans, Marina Y.; Gallagher, Emily; Juste, Marina Mariano; Pollentier, Ivan; Rajeev, Rajendran; Helfenstein, Patrick; Fernandez, Sylvie; Kazazis, Dimitrios; Ekinci, Yasin

doi:10.1117/12.2502480

Cited by 5 publications

(6 citation statements)

References 7 publications

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“…Also, it is suspected that random scattering by the contaminant and pellicle could have resulted in blurry lines at the edge of the image. 27 The existence of contaminants is evident when we observe the EUV intensity profile across the L/S patterns. While the EUV intensity profile of the naked EUV mask [Fig.…”

Section: Resultsmentioning

confidence: 82%

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo

Kim

Jang

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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Background: An extreme ultraviolet (EUV) pellicle is necessary to increase the process yield even though the declining throughput is a big concern. However, an EUV metrology/inspection tool for this pellicle has not been commercialized yet. Aim: The goal of this study is to verify the pellicle/mask inspection feasibility of EUV scanning lensless imaging (ESLI) and verify the impact of contaminants on pellicles depending on their size. Approach: Through-pellicle imaging was implemented by using ESLI, which uses a high-order harmonic generation EUV source and ptychography. Optical characteristics of various sizes of Fe-contaminated EUV pellicles were evaluated to verify their impact on wafer images. Results: Large size (∼10 μm) contaminants on the pellicle were found to contribute to the final wafer pattern loss. However, small size (2 to 3 μm) contaminants on the pellicle do not have substantial impact on the wafer image. Conclusions: The defect detection capability of ESLI for pellicle and mask was confirmed. Therefore, ESLI is useful in applications like pellicle qualification and EUV mask inspection metrology.

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Section: Resultsmentioning

confidence: 82%

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo

Kim

Jang

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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“…We have demonstrated that RESCAN is capable of detecting programmed defects on EUV logic patterns using die-to-die and die-to-database approaches, 3 and we tested it on pellicle-covered samples, evaluating the impact of different types of pellicles on the image quality. 9 We describe here the experiments performed in order to evaluate the inspection sensitivity of RESCAN for absorber and phase defects.…”

Section: Rescan Working Principle and Layoutmentioning

confidence: 99%

Quantitative characterization of absorber and phase defects on EUV reticles using coherent diffraction imaging

Mochi

Fernandez

Nebling

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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Background: Reliable photomask metrology is required to reduce the risk of yield loss in the semiconductor manufacturing process as well as for the research on absorber materials. Actinic pattern inspection (API) of EUV reticles is a challenging problem to tackle with a conventional approach. For this reason, we developed RESCAN, an API platform based on coherent diffraction imaging. Aim: We want to verify the sensitivity of our platform to absorber and phase defects. Approach: We designed and manufactured two EUV mask samples with absorber and phase defects, and we inspected them with RESCAN in die-to-database mode. Results: We reconstructed an image of an array of programmed absorber defects, and we created a defect map of our sample. We inspected two programmed phase defect samples with buried structures of 3.5 and 7.8 nm height. Conclusions: We verified that RESCAN, in its current configuration, can detect absorber defects in random patterns and buried (phase) defects down to 50 × 50 nm 2 .

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“…We have demonstrated that RESCAN is capable to detect programmed defects on EUV logic patterns using die-to-die and die-to-database approaches 2 and we tested it on pellicle-covered samples, evaluating the impact of different types of pellicles on the image quality. 8 We describe here the experiments performed in order to evaluate the inspection sensitivity of RESCAN for absorber and phase defects.…”

Section: Rescan Working Principle and Layoutmentioning

confidence: 99%

“…The RESCAN actinic pattern inspection microscope is a research and development platform for EUV mask inspection based on lensless imaging. After demonstrating the feasibility of actinic pattern inspection in dieto-die and in die-to-database mode, 2 and the ability of the microscope to inspect samples equipped with EUV pellicles, 8 we wanted to test the current defect sensitivity of RESCAN for absorber and buried structures. To investigate RESCAN's sensitivity to absorber defects, we fabricated a sample consisting of a multilayer-coated silicon wafer and a 140-nm thick HSQ absorber layer.…”

Section: Conclusion and Future Plansmentioning

confidence: 99%

Amplitude and phase defect inspection on EUV reticles using RESCAN

Mochi

Fernandez

Nebling

et al. 2019

Extreme Ultraviolet (EUV) Lithography X

Self Cite

View full text Add to dashboard Cite

Reliable photomask metrology is required to reduce the risk of yield loss in the semiconductor manufacturing process. Actinic pattern inspection (API) of EUV reticles is a challenging problem to tackle with a conventional approach. For this reason we developed an API platform based on coherent diffraction imaging. Aim:We want to verify the sensitivity of our platform to absorber and phase defects. Approach:We designed and manufactured two EUV mask samples with absorber and phase defects and we inspected them with RESCAN in die-to-database mode. Results:We reconstructed an image of an array of programmed absorber defects and we created a defect map of our sample. We inspected two programmed phase defect samples with buried structures of 3.5 nm and 7.8 nm height. Conclusions:We verified that RESCAN in its current configuration can detect absorber defects in random patterns and buried (phase) defects down to 50 × 50 nm 2 .

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Experimental evaluation of the impact of EUV pellicles on reticle imaging

Cited by 5 publications

References 7 publications

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Quantitative characterization of absorber and phase defects on EUV reticles using coherent diffraction imaging

Amplitude and phase defect inspection on EUV reticles using RESCAN

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