2022
DOI: 10.1103/physrevlett.129.187203
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Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

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Cited by 11 publications
(3 citation statements)
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“…The values of the SOC parameters is comparable with those of Bi 2 WO 6 , BiAlO 3 , GeTe or BiTeI (Ref. [27]), and it is one order of magnitude larger than the values reported in a recent work on LaAlO 3 /LaFeO 3 /SrTiO 3 [37]. Furthermore, exploiting the SOC in this material can be achieved without the need to engineer the unit cell, as it may occur with certain tungsten oxide compounds such as WO 3 , which requires confinement in the direction perpendicular to the polarization [27].…”
supporting
confidence: 63%
“…The values of the SOC parameters is comparable with those of Bi 2 WO 6 , BiAlO 3 , GeTe or BiTeI (Ref. [27]), and it is one order of magnitude larger than the values reported in a recent work on LaAlO 3 /LaFeO 3 /SrTiO 3 [37]. Furthermore, exploiting the SOC in this material can be achieved without the need to engineer the unit cell, as it may occur with certain tungsten oxide compounds such as WO 3 , which requires confinement in the direction perpendicular to the polarization [27].…”
supporting
confidence: 63%
“…We found Δ so decreasing to about 31 meV when the LAO thickness increases to 50 nm. Notably, the maximal Rashba splitting energy Δ so ≈ 48 meV of LAO/KTO (111) heterointerface in this work is almost one order of magnitude larger than that of the LAO/STO systems (3–7 meV) [ 10,29,40,41 ] and also significantly surpass that of LAO/KTO (001) (≈30 meV) [ 20 ] and EuO/KTO(110) heterointerfaces(≈20 meV). [ 25 ]…”
Section: Resultsmentioning
confidence: 87%
“…For the traditional crystalline 2DES on the SrTiO 3 substrate, previous studies have revealed that the interfacial lattice mismatch between the polar capping layer and SrTiO 3 substrate is strongly coupled to the low-temperature transport properties [12,54]. The lowtemperature Âľ H can be improved by thirty times when reducing the lattice mismatch from −3% to −1% [14], corresponding to the less strained heterointerfaces for the higher carrier mobilities [54,55]. This trend is also in line with the results from our crystalline bilayers.…”
Section: Resultsmentioning
confidence: 99%