Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell

Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Hellstroem, Staffan; Huffaker, Diana L.; Liang, Baolai; Hubbard, Seth M.

doi:10.1109/pvsc.2014.6924892

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2015

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“…The .5D spectra illuminated current-voltage curve also showed poor efficiency due to degraded carrier collection and has been discussed in detail in Ref. [8].…”

Section: Resultsmentioning

confidence: 90%

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Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding

Hubbard

Hellstroem

Bittner

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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We present simulations of InAs QDs embedded in AlAsSb, which may be a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal and a nearly flat type-II valence band lineup. We have also experimentally investigated InAs quantum dots (QDs) grown in an AlAs 0.56 Sb 0.44 matrix in the unintentionally doped (uid) region of an In 0.52 Al 0.48 As solar cell. Optical and electrical properties of the solar cell were investigated to evaluate the possibility of photon assisted absorption from the QD states. As well, potential designs for a AlAs 0.56 Sb 0.44 heterojunction QD solar cell were evaluated.Index Terms -quantum dot, InAs, AlAsSb.

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“…The .5D spectra illuminated current-voltage curve also showed poor efficiency due to degraded carrier collection and has been discussed in detail in Ref. [8].…”

Section: Resultsmentioning

confidence: 90%

“…Details on the growth and optimization of InAs/AlAsSb QDs can be seen in Refs. [7,8]. As well, pin control solar cells using both InAlAs and AlAsSb emitters were tested.…”

Section: Resultsmentioning

confidence: 99%