Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique

Costagliola, Maurizio; d’Alessandro, V.; Céli, D.; Chantre, A.; Chevalier, P.; Meister, T.F.; Aufinger, Klaus; Rinaldi, N.

doi:10.1109/bctm.2011.6082778

Cited by 1 publication

(3 citation statements)

References 12 publications

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“…Finally, it is noteworthy that also other models-and the related parameter optimization procedures-can be adopted instead of (20) and (22) to describe HI and II, respectively.…”

Section: Impact Ionizationmentioning

confidence: 99%

“…Here the aim is to extend the analysis sketched in [22] by 1) providing more details on the extraction procedure; 2) performing a wide experimental campaign on state-ofthe-art IFX SiGe:C devices to showcase the impact upon base resistance of emitter width/length and lateral scaling; 3) numerically and experimentally proving the accuracy of the approach; 4) testing the dc methods presented in [2] and [6] on the same transistors.…”

Section: Introductionmentioning

confidence: 99%

“…A first attempt to tackle this issue has been proposed in [22], where the simple and fast dc technique developed in [3] was improved so as to account for SH, high-injection (HI), and II effects, and applied to DOTFIVE SiGe:C HBTs provided from STMicroelectronics [23], [24] and IFX. In [25], a dc method relying on special dual-base tetrode test structures has been adopted to extract the sheet resistance of the base components.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2016

IEEE Trans. Electron Devices

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This paper presents an improved variant of a dc method to experimentally evaluate the base resistance of a bipolar transistor. The technique relies on a device model associated with a simple parameter optimization methodology, and is suited for modern technologies wherein self-heating and impact-ionization effects play a relevant role. The approach is successfully applied to state-of-the-art SiGe:C heterojunction bipolar transistors for high-frequency applications, although it can in principle be exploited for any bipolar device. The accuracy of the method is verified by numerical and experimental procedures.

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“…Finally, it is noteworthy that also other models-and the related parameter optimization procedures-can be adopted instead of (20) and (22) to describe HI and II, respectively.…”

Section: Impact Ionizationmentioning

confidence: 99%