Experimental identification of thermal induced warpage in polymer–metal composite films

Zhu, Chunsheng; Xu, Gaowei; Li, Luo

doi:10.1016/j.microrel.2016.03.023

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…The core advantage of our patterned growth method is that the VG/Cr can be naturally separated from the substrate, which is thought to be due to the mismatch in thermal stress between the Cr film and the SiO 2 /Si substrate. Due to differences in physical properties (mainly the coefficient of thermal expansion, CTE), stress tends to be induced in the film-substrate complex during heating or cooling processes, which is known as thermal stress [ 30 , 31 , 32 ]. When the temperature reaches a certain point (yield temperature), the film is unable to withstand the intense thermal stress (yield stress) resulting from the great change in temperature and is subjected to plastic deformation, including: cracking, warping and delamination [ 30 , 31 , 33 ].…”

Section: Resultsmentioning

confidence: 99%

“…Due to differences in physical properties (mainly the coefficient of thermal expansion, CTE), stress tends to be induced in the film-substrate complex during heating or cooling processes, which is known as thermal stress [ 30 , 31 , 32 ]. When the temperature reaches a certain point (yield temperature), the film is unable to withstand the intense thermal stress (yield stress) resulting from the great change in temperature and is subjected to plastic deformation, including: cracking, warping and delamination [ 30 , 31 , 33 ]. In the fields of materials science and microelectronics, thermal stress is commonly a problem that cannot be ignored, because it can damage the original structure of devices or materials and thus degrade the electrical properties [ 34 , 35 , 36 ].…”

Section: Resultsmentioning

confidence: 99%

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Direct Growth of Patterned Vertical Graphene Using Thermal Stress Mismatch between Barrier Layer and Substrate

Qian

Deng

et al. 2023

Nanomaterials

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Vertical graphene (VG) combines the excellent properties of conventional graphene with a unique vertical nanosheet structure, and has shown tremendous promise in the field of electronics and composites. However, its complex surface morphology brings great difficulties to micro-nano fabrication, especially regarding photolithography induced nanosheet collapse and remaining chemical residues. Here, we demonstrate an innovative method for directly growing patterned VG on a SiO2/Si substrate. A patterned Cr film was deposited on the substrate as a barrier layer. The VG was synthesized by PECVD on both the patterned Cr film and the exposed SiO2/Si substrate. During the cooling process, the patterned Cr film covered by VG naturally peeled off from the substrate due to the thermal stress mismatch, while the VG directly grown on the SiO2/Si substrate was remained. The temperature-dependent thermal stress distribution in each layer was analyzed using finite element simulations, and the separation mechanism of the Cr film from the substrate was explained. This method avoids the contamination and damage caused by the VG photolithography process. Our work is expected to provide a convenient and reliable solution for the manufacture of VG-based electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Direct Growth of Patterned Vertical Graphene Using Thermal Stress Mismatch between Barrier Layer and Substrate

Qian

Deng

et al. 2023

Nanomaterials

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“…Sethuraman et al used the MOSS system to monitor the diffusion-induced stress of the composite silicon electrodes and suggested that plasticity of the electrode can induce irreversible shape changes in the particles [23]. Li et al proposed a novel method to measure the wafer warpage origination and evolution of multi-layered polyimide/Cu composite film in situ using the MOSS measurement system [24]. As an important negative active material for batteries, the composite graphite electrode is widely used because of its considerable first coulomb efficiency, reversible capacity, and excellent cycle stability.…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review of In Situ Measurement Techniques for Evaluating the Electro-Chemo-Mechanical Behaviors of Battery Electrodes

Jiang,

Chen,

et al. 2024

Molecules

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The global production landscape exhibits a substantial need for efficient and clean energy. Enhancing and advancing energy storage systems are a crucial avenue to optimize energy utilization and mitigate costs. Lithium batteries are the most effective and impressive energy utilization system at present, with good safety, high energy density, excellent cycle performance, and other advantages, occupying most of the market. However, due to the defects in the electrode material of the battery itself, the electrode will undergo the process of expansion, stress evolution, and electrode damage during electro-chemical cycling, which will degrade battery performance. Therefore, the detection of property changes in the electrode during electro-chemical cycling, such as the evolution of stress and the modulus change, are useful for preventing the degradation of lithium-ion batteries. This review presents a current overview of measurement systems applied to the performance detection of batteries’ electrodes, including the multi-beam optical stress sensor (MOSS) measurement system, the digital image correlation (DIC) measurement system, and the bending curvature measurement system (BCMS), which aims to highlight the measurement principles and advantages of the different systems, summarizes a part of the research methods by using each system, and discusses an effective way to improve the battery performance.

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“…Silicon wafers are widely used in the fabrication process of integrated circuits (IC) and MEMS devices [ 1 , 2 ]. The wafer residual stress is remarkable for the following reasons: The thin pancake-like shape of the wafer, the multiple-layer structure with a different coefficient of thermal expansion (CTE), and the high-temperature fabrication process such as thermal oxidation, hard bake of photoresist, annealing and bonding process [ 3 , 4 , 5 , 6 , 7 ]. The combined effects of the induced residual stresses acting on the backside and frontside of the wafer result in wafer warpage [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers

et al. 2022

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The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology.

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Experimental identification of thermal induced warpage in polymer–metal composite films

Cited by 6 publications

References 29 publications

Direct Growth of Patterned Vertical Graphene Using Thermal Stress Mismatch between Barrier Layer and Substrate

Direct Growth of Patterned Vertical Graphene Using Thermal Stress Mismatch between Barrier Layer and Substrate

A Comprehensive Review of In Situ Measurement Techniques for Evaluating the Electro-Chemo-Mechanical Behaviors of Battery Electrodes

Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers

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