Experimental investigation of 650V superjunction IGBTs

Oh, Kwang-Hoon; Kim, Jisun; Seo, Hoewon; Jung, Jin‐Woo; Kim, Euntaek; Kim, Soo-Seong; Yun, Chong-Man

doi:10.1109/ispsd.2016.7520837

Cited by 22 publications

(11 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The majority of investigations for the SJ RC-IGBT structure have been simulation based due to the nature of manufacturing IGBTs using Field Zone (FZ) wafers and the concern regarding the creation of voids within the structure [41]. Experimental results for the SJ SPT-IGBT and SJ NPT-IGBT were reported validating the simulations, showing that the switching losses of the SJ NPT-IGBT were lower than the SJ SPT-IGBT.…”

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 91%

“…Experimental results for the SJ SPT-IGBT and SJ NPT-IGBT were reported validating the simulations, showing that the switching losses of the SJ NPT-IGBT were lower than the SJ SPT-IGBT. The SJ-NPT had better short circuit ruggedness, but both exhibited superior on-state and switching performance compared to a traditional SPT-IGBT [41]. The results highlight that the tradeoff between the forward and reverse conduction capabilities in the superjunction design is difficult to optimise [10].…”

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 96%

“…For a TFS SJ RC-IGBT comparable with a CoolMOS structure (3 x 10 15 cm 3 p-pillar doping and Ymid=70µm), the switching losses of the proposed device are lower than a standard RC-IGBT, however, a snapback is present in the I-V characteristic. Increasing Ymid to achieve a deep superjunction results in an initial increased gate capacitance which decreases rapidly, and therefore enhanced ringing is present in the switching waveforms, which can result in worse switch-off losses compared to a NPT-IGBT [40], [41]. Increasing the doping concentration of the pillars is also detrimental to turn-off of the device as the depletion region expansion is slower [42].…”

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 99%

“…Increasing doping concentration of pillars increases turn-off time. Device has not been manufactured, but an SJ SPT IGBT has been reported [41].…”

Section: Conceptmentioning

confidence: 99%

See 3 more Smart Citations

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

show abstract

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 91%

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 96%

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 99%

“…Increasing doping concentration of pillars increases turn-off time. Device has not been manufactured, but an SJ SPT IGBT has been reported [41].…”

Section: Conceptmentioning

confidence: 99%

See 2 more Smart Citations

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…The direct wafer bonding technique could be employed to manufacture this device. The SJ pillars can be formed either by using a trench and refill technique [11] or by other demonstrated techniques such as that reported in [12]. The proposed fabrication would require the front and backside wafers to be formed separately, with a SJ implant applied to both wafers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Findlay

Udrea

Antoniou

2019

IEEE Electron Device Lett.

View full text Add to dashboard Cite

This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense. 

show abstract

The design of a new heterogate superjunction insulated-gate bipolar transistor

Gupta

Naugarhiya

2021

J Comput Electron

View full text Add to dashboard Cite

Experimental investigation of 650V superjunction IGBTs

Cited by 22 publications

References 5 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

The design of a new heterogate superjunction insulated-gate bipolar transistor

Contact Info

Product

Resources

About